HUFA76429D3S

HUFA76429D3S is a single N-Channel enhancement mode MOSFET meant for industrial applications, primarily power switching and signal processing purposes. It has an absolutely field-effected threshold voltage range of 2.85 V to 3.35 V and Ron as low as 0.62Ω.

Application Field

HUFA76429D3S is frequently used in circuit applications related to power switches, signal processing and in the manufacturing of panels. It is primarily used in devices that need to carry high current capacities. This MOSFET can also be used for making high voltage switching applications, and devices requiring low-voltage operation.

• High voltage and high current loads, switching applications with high-voltage needs and high accuracy needs.
• Control and condition panels.
• Low-voltage apparatus.
• Various motors.
• RF instrumentation.
• Computer PCs.

Similarly, HUFA76429D3S is used in the manufacturing and testing of automotive circuit applications, computers, audio amplifiers and other systems requiring power and signal processing.

Working Principle

This MOSFET uses a unique and complex structure to obtain maximum performance, as shown in the accepted diagram. Gate/Source is the control port, where positive voltage applied will turn the device ON. As negative voltage is applied, the device will turn OFF. Drain/Source is the connection for the output port, whereas Drain/Body is the current path, which represents the main way for the flow of current.

Using the referred pins, a depletion, junction MOSFET is created and on turning ON, current will start to flow from drain to source. However, the same cannot be said with an enhancement MOSFET, because for current to flow, the Gate/Source has to be biased with a certain voltage level. In HUFA76429D3S’s case, this is in the range of 2.85 to 3.35 volts at 25°C.

For optimal performance, a COA or Capacitors-On-Array can be placed in various paths. The principle of COA makes use of an array of electrical capacitors to filter the response of the device, thus enhancing the results. The COA works to stabilize the voltage, hence bringing in the efficacy of the device.

Lastly, the MOSFET must be placed in a closed, ideal environment to prevent conduction leakage, ground loops or excessive noise. Depending on the magnitude and type of input, switching losses, ON and OFF gate charge, drain-source ON resistance, and maximum continuous drain-source voltage will vary.

Conclusion

HUFA76429D3S is a reliable and robust MOSFET specifically designed for high-current loads. Its structure is also designed to yield improved results, including higher power efficiency, faster response time and higher peak current withstanding capacity. Furthermore, it is compatible with applications that need a quality power switch and signal processing needs, such as those found in automotive systems, computers and audio amplifiers.