Allicdata Part #: | HUFA75344S3-ND |
Manufacturer Part#: |
HUFA75344S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-262AA |
More Detail: | N-Channel 55V 75A (Tc) 285W (Tc) Through Hole I2PA... |
DataSheet: | HUFA75344S3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 285W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The HUFA75344S3 is a semiconductor device which belongs to a larger category of devices known as transistors, specifically FETs and MOSFETs and within this subset, single types. A transistor is a type of switch which is used to control the flow of electricity. It can be used to amplify electrical signals and can also be used to move signals from one circuit node to another. This type of semiconductor is an N-channel depletion-mode MOSFET and is manufactured by ProTek Devices. It is designed to provide enhanced performance in switching power supplies and has a maximum voltage of 75V.
The main feature of this semiconductor device is its low input capacitance. This low input capacitance is achieved by the use of a high cell density in the fabrication process. This high cell density ensures that the input capacitance of the device is kept low, enabling faster switching performance as well as increased current carrying capability. Additionally, this device is designed to have a higher gain, making it ideal for use in voltage control applications.
The construction of an HUFA75344S3 is based on an N-channel MOSFET technology allowing for the integration of both the gate and the source terminals on one integrated device. The source terminal, which is used to drive the gate, is connected to the drain terminal, allowing the transistor to be used as a switch between two different states. This type of transistor also has a body diode which helps to limit the voltage and makes it suitable for applications requiring over-voltage protection.
The working principle of the HUFA75344S3 is based on the use of an electric field to control the flow of charge carriers or electrons through the device. The electric field is created by an applied voltage between the gate and the source terminals. When an application voltage is applied across the gate and the source terminals, it creates a voltage differential between the two terminals. This voltage differential creates an electric field which is used to control the charge carriers.
In practical applications, the HUFA75344S3 can be used to switch electrical signals and control the flow of currents in circuit applications. It is often used in switching power supplies as it is capable of handling high voltages. The device is also widely used in applications which require voltage control, such as in audio amplifiers, RF amplifier applications, and various motor control solutions. Additionally, the device is capable of providing enhanced surge protection and over-voltage protection.
The HUFA75344S3 is a useful and versatile type of semiconductor device which has a variety of applications in the field of electronics. Its high cell density ensures a low input capacitance which makes it ideal for use in switching power supplies. Its large drain current capability and high voltage ratings also make it a great choice for applications which require voltage control and/or overvoltage protection. Finally, its body diode helps to protect against surges and other potential damage caused by external influences. All of these features make the HUFA75344S3 an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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