Allicdata Part #: | HUFA75329D3ST-ND |
Manufacturer Part#: |
HUFA75329D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 20A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-... |
DataSheet: | HUFA75329D3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA75329D3ST is a type of single-gate field-effect transistor (FET). FETs are a type of transistor commonly used in many electronic applications. They are normally composed of three crucial parts: A source, a drain, and a gate. The gate is the controlling element in the FET and is responsible for controlling the current flow between the source and drain. It is the main element which makes transistors so useful in certain applications.
The HUFA75329D3ST application field is mainly used in many radio frequency (RF) applications. This component is normally used for interfacing low power sources when combined with other components from the same manufacturer family. It can provide power enhancement, improved power handling, and handling of higher input frequencies. The component is optimized for maximizing the forwarding gain over the whole operational frequency range.
The source-gate voltage drop of the HUFA75329D3ST allows for precise control current even under low voltage situations, making it very useful for applications such as wireless broadband devices, wireless local area network (LAN) devices, and wireless personal area network (PAN) devices. Its high breakdown voltage also helps to maximize power output while keeping it within safe limits. Additionally, its low input gate capacitance helps to keep unwanted radio frequency noise to a minimum. This component is also known for its low thermal-noise performance, meaning that it can be used in applications which require very precise control signals which are free of interference.
The working principle of the HUFA75329D3ST is quite simple. When the source is low, the gate pin is pulled down to turn off the transistor. When the source is high, the gate pin is pulled up to turn on the transistor. This allows the HUFA75329D3ST to control the current flowing between the source and drain, controlling the amount of power being given off by the device. By controlling the gate voltage, the level of current flowing between the source and drain can be manipulated.
In conclusion, the HUFA75329D3ST is an ideal device for applications which need very precise control signals, such as wireless broadband or LAN equipment. Its high breakdown voltage and low input gate capacitance make it a very desirable component which can be used to maximize power output while keeping it within safe limits. Additionally, the low thermal-noise performance makes it very well-suited for use in applications which require precise control signals which are free from interference.
The specific data is subject to PDF, and the above content is for reference
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