HUFA76439S3ST Allicdata Electronics
Allicdata Part #:

HUFA76439S3ST-ND

Manufacturer Part#:

HUFA76439S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 75A D2PAK
More Detail: N-Channel 60V 75A (Tc) 155W (Tc) Surface Mount D²P...
DataSheet: HUFA76439S3ST datasheetHUFA76439S3ST Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 155W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2745pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The HUFA76439S3ST is a high-voltage N-channel MOSFET that is used in many applications requiring efficient power switching. It is a single-gate MOSFET, meaning that the gate is the only terminal that needs to be controlled. This makes it ideal for applications with limited space, as it requires fewer connections compared to other FETs.

The HUFA76439S3ST has a drain-to-source voltage of 400V, which allows it to be used in applications where higher voltages are required. It also has a current handling capacity of up to 20A, making it suitable for power switching applications. Its maximum on-state drain-to-source resistance is only 0.01Ohm, which makes it an extremely efficient power switch.

The working principle of the HUFA76439S3ST is based on the idea of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). A MOSFET is a voltage-controlled device and works by having a gate electrode connected to a source and drain electrodes. When a voltage is applied to the gate, an electric field is created between the gate and the channel, which causes the channel to become conductive. This allows current to flow between the source and drain electrodes and thus switching power on and off in a circuit.

The HUFA76439S3ST is often used in high frequency switching applications such as motor control, DC-to-DC converters, solar inverters, and battery management systems. It is also used in industrial and consumer applications, such as solar lighting, electric vehicle chargers, and consumer appliances. Due to its high performance and reliability, it is a preferred choice for many applications that require high-voltage power switching.

In summary, the HUFA76439S3ST is a high-voltage N-channel MOSFET that is used in many applications requiring efficient power switching. It is a single-gate MOSFET, meaning that the gate is the only terminal that needs to be controlled. Its drain-to-source voltage is 400V, and has a current handling capacity of up to 20A. Its working principle is based on the Metal-Oxide-Semiconductor Field-Effect Transistor and it is often used in high frequency switching applications and consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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