HUFA75623S3ST

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	85W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	790pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	64 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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TEXTHUFA75623S3ST, commonly known as N-Channel Field Effect Transistor (FET), is a type of transistor which has one or more input signal pins and one or more output pins. It is made up of a gate, source, body, and drain. The gate acts as a switch which turns the transistor on and off. When the gate voltage is high, it turns the transistor on, and when the gate voltage is low, it turns the transistor off. The source and drain pins act as an amplifier. The source and drain current will increase when the gate voltage is high and decrease when the gate voltage is low. The body pin is used to provide the transistor with a fixed bias voltage. The HUFA75623S3ST is a medium power low-gate-charge, N-Channel FET, which can be used in various applications such as various industrial electronic, automotive electronic, and consumer electronic circuits. It is typically used for switching and amplification applications. The HUFA75623S3ST is a single FET with a maximum drain-source voltage of 30V and a maximum ground-source voltage of 15V. It also has a drain-source resistive of .03Ohm. The device also features integrated reverse avalanche protection which can provide reliable performance in applications where reverse bias occurs, such as overvoltage protection. The working principles of the HUFA75623S3ST transistors are based on the flow of electrons. When an electric field is applied to the gate terminal, the threshold voltage (Vt) is exceeded, and the electrons travel across the channel. This channel of electrons is called inversion channel. The field effect transistor is sensitive to gate voltage, so the current between the drain and source terminals is modulated by the applied voltage. As the voltage increases, the current also increases, and vice versa. The current gain is determined by the ratio of the gate voltage and the drain-source voltage. The HUFA75623S3ST can also function as a voltage regulator. When the drain-source voltage increases, the gate voltage adjusts itself to maintain a constant current. The HUFA75623S3ST can be used in voltage-controlled switches, amplifying circuits, and input buffers. These devices are also used in linear and switching applications, digital logic controls, and power supplies. In conclusion, the HUFA75623S3ST is a type of field effect transistor, which is commonly used in industrial, automotive and consumer electronics. It is a single FET with a maximum drain-source voltage of 30V and a maximum ground-source voltage of 15V. The working principles of this transistor are based on the flow of electrons and the FET is sensitive to gate voltage. These transistors can be used in various applications such as in voltage-controlled switches, amplifying circuits, input buffers, linear and switching applications, digital logic controls, and power supplies.

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