Allicdata Part #: | HUFA76629D3-ND |
Manufacturer Part#: |
HUFA76629D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 20A IPAK |
More Detail: | N-Channel 100V 20A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | HUFA76629D3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1285pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUFA76629D3 is a type of Field-Effect Transistor (FET). It is a single-type MOSFET, which mainly relies on an electric field to control the current flow. As an active transistor, HUFA76629D3 is normally used for switching and controlling signals since its easier construction and higher speed than a bipolar junction transistor (BJT).
HUFA76629D3 is a N-channel enhancement mode, which is a kind of transistor that has four pins, drain, gate, source and substrate. Conventionally, the drain and source are the two terminals of the device, while the gate and substrate are the two terminals that control the device.
The gate terminal of HUFA76629D3 works as a control element, which creates an electric field that controls the flow of electrons between the drain and the source. When a positive voltage is applied to the gate terminal, the electric field will strengthen and increase the current flow between the s&d terminals. On the other hand, when a negative voltage is applied, the electric field will reduce and hence decrease the current flow.
HUFA76629D3 MOSFETs are commonly used in a wide range of applications, from signal switching and amplifying, to controlling high-voltage levels such as those found in automotive systems. They can also be used as switch elements in many consumer electronic devices, such as mobile phones and computers.
Due to its power efficiency and versatile operation, HUFA76629D3 MOSFETs are also a popular choice for RF (radio frequency) applications, where they are used to provide both power amplification and switching functions in telecommunications. In addition, they can also be used to provide an uninterrupted conversion of signals, meaning they can be put to use in digital signal processing applications that require high speed signal handling.
In the automotive world, HUFA76629D3 MOSFETs have become a commonly used component in modern cars, with the power supply for most of the car’s systems (such as climate control, engine management, etc.) relying on these MOSFETs to provide reliable control of power delivery and signal switching.
Overall, HUFA76629D3 is a highly versatile and effective type of transistor that can be used in a range of applications. Its ability to switch and control large currents, coupled with its low power consumption, makes it an ideal choice for a variety of applications, both industrial and consumer.
The specific data is subject to PDF, and the above content is for reference
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