HUFA76413DK8T Discrete Semiconductor Products |
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Allicdata Part #: | HUFA76413DK8TTR-ND |
Manufacturer Part#: |
HUFA76413DK8T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 5.1A 8-SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 5.1A 2.5W Surf... |
DataSheet: | HUFA76413DK8T Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Arrays
The HUFA76413DK8T is a quad P-Channel TrenchMOSFET array featuring integrated thermal shut down, over temperature protection and ESD capability. Each MOSFET in the array combines low on-resistance and fast switching times with a low gate threshold voltage, making the device ideal for applications demanding low power. The device is available in 8-pin DPAK, DFN and SOIC packages.
Application Field
The HUFA76413DK8T is extensively used in power management and embedded systems, such as notebooks, netbooks, tablet PCs, LCD monitors, digital photo frames, industrial control systems and portable audio. Power management includes battery charging, pulse width modulation (PWM) for DC-DC and AC-DC conversion, and power sequencing. It is also used for LCD backlight control and other applications with low power.
Working Principle
The HUFA76413DK8T is a quad P-Channel TrenchMOSFET array featuring integrated thermal shut down and over temperature protection. The device operates on a simple, three-terminal gate source drain structure. The gate voltage (VGS) creates an electric field in the device to control the current flow regulated between the source and drain. This is known as “channel enhancement” and is the basic parameter of effective operation of the device. The voltage on the sourse determines the current flow in the drain and the power supply FETs. The drain current is governed by the voltage on the gate.
The device has additional features to improve its performance, such as a high temperature tolerant package, robust gate stress, better thermal performance and extended operating temperature range. This allows for higher power handling in higher temperature environments. The integrated thermal shut down feature contains two shut down circuits dedicated for overtemperature protection and ESD capability. The device is supplied in an 8 pin DPAK,DFN and SOIC package.
Conclusion
The HUFA76413DK8T is a versatile and reliable device which can be used in applications requiring low power and high temperatures. Its integrated thermal shut down, over temperature protection and ESD capability help ensure reliable operation in hostile environments. It is available in various package types to meet your needs, and its fast switching times, low on-resistance, and low gate threshold voltage make it the perfect choice for your power management needs.
The specific data is subject to PDF, and the above content is for reference
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