HUFA75545P3 Allicdata Electronics
Allicdata Part #:

HUFA75545P3-ND

Manufacturer Part#:

HUFA75545P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 75A TO-220AB
More Detail: N-Channel 80V 75A (Tc) 270W (Tc) Through Hole TO-2...
DataSheet: HUFA75545P3 datasheetHUFA75545P3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
FET Feature: --
Power Dissipation (Max): 270W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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HUFA75545P3 is a type of silicon-gate insulated-gate field-effect transistor (IGFET) also known as an insulated-gate bipolar transistor (IGBT). This type of transistor is used for a variety of applications, most commonly for power conversion, in both AC and DC systems. The HUFA75545P3 IGBT operates within a power range of 30V to 900V and provides current rating of 20A up to 400A.

An IGBT is made from two distinct regions: a p-type material, known as the drift region, and an n-type material, known as the body region. A single gate electrode is connected to the drift region is then insulated from the source region by a layer of oxide.

The gate is the controlling element of the IGBT. When negatively charged, the IGBT turns off and blocks current flow through the device, effectively acting as an open switch. When positively charged, the IGBT turns on, allowing current to flow through the device, effectively acting as a closed switch. The current flows through the drift region, the body region, and then to the source.

The HUFA75545P3 can be found in a variety of applications, most notably in motor control and power conversion. The device is used in motor control applications, such as brushless DC motor drives, DC motor controllers, servo amplifiers, and induction motor controls. It is also used in power conversion applications, such as AC to DC, DC to DC, and DC to AC power conversion.

In motor control applications, the HUFA75545P3 can be used to switch the power between the motor and the supply. This allows for precise control of the motor speed and the direction of rotation, enabling applications such as servo operation and servo positioning. In power conversion applications, the IGBT can be used to switch the power between two different voltage levels, to allow for efficient and reliable power conversion.

The HUFA75545P3 also features a high compression and enhanced reverse voltage performance, allowing for the protection of critical components from over-voltage or transient events. It also features a temperature compensation value (TCV) which helps maintain the stability of the device under a wide range of temperatures.

In summary, the HUFA75545P3 IGBT is an ideal choice for a variety of power control applications, providing enhanced voltage rating, current control capabilities and temperature stability. Due to its wide application field and reliable performance, the HUFA75545P3 IGBT provides a great value for customers looking for an effective and reliable power control solution.

The specific data is subject to PDF, and the above content is for reference

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