HUFA75343S3S Allicdata Electronics
Allicdata Part #:

HUFA75343S3S-ND

Manufacturer Part#:

HUFA75343S3S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 270W (Tc) Surface Mount D²P...
DataSheet: HUFA75343S3S datasheetHUFA75343S3S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 270W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The HUFA75343S3S is a large-power type, 80V, 7.5A, surface-mount N-channel MOSFET. It is a kind of single, insulated-gate field-effect transistor (IGFET) which is designed for use in applications such as motor driving circuits, service power switches and or inductive loads. By using an insulated-gate, it enables the gate to be driven with a nearly constant gate-source voltage regardless of the source voltage, making it ideal for applications requiring high-power control. With an on-resistance of less than 0.016 ohms and an on-capacitance of 12nF, it provides excellent performance, low switching losses, low gate and output capacitance, low gate-and-drain feedback capacitance, and low turn-on and turn-off times. The HUFA75343S3S also employs an avalanche energy saving structure, which can help reduce leakage current and increase operating temperature range.

These features make the HUFA75343S3S an ideal choice for motor control applications as it is able to control the speed and load of motors. Its surface-mount package also makes it suitable for use in high-density, small space environments such as robotics, machine control, and industrial automation. In addition, due to its large-power classification, it is ideal for applications where large amounts of power are needed, such as public transportation and off-road vehicles. The HUFA75343S3S can also be used in applications with tight space constraints, since its surface-mount package allows for minimal board real estate and rapid prototype assembly.

The working principle of the HUFA75343S3S is based on the basic concepts of transistor-level switching. In this configuration, the N-channel MOSFET acts as a controllable switch, which is used to control power between two points. The transistor will open when the gate-source voltage is applied, which in turn causes the drain-source voltage to drop to a low value, thereby allowing current to flow between the drain and source. The HUFA75343S3S provides low on- and off-capacitance and on-resistance, making it ideal for efficient power switching in motor control, service power switching, and inductive load applications.

In addition, the HUFA75343S3S has an extremely low leakage current, making it suitable for a wide range of applications where high levels of reliability and power efficiency are essential. Its wide operating temperature range (-55°C to +175°C) makes it suitable for both commercial and industrial applications, and its long-term reliability ensures a long lifecycle and sustained performance. Overall, the HUFA75343S3S makes an excellent choice for a wide variety of applications requiring high-power switching, reliable performance, and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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