IPD90N03S4L02ATMA1

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IPD90N03S4L02ATMA1 Application Field and Working Principle

The IPD90N03S4L02ATMA1 is a N-Channel MOSFET transistor device manufactured by Infineon Technologies. This device comes with a maximum drain to source voltage of 90V, max drain-source current of 30A, maximum gate-source voltage of +/- 20V, and a continuous drain current of 8A. The IPD90N03S4L02ATMA1 also features a threshold voltage of 2.4V, Power Dissipation of 82mW, and a Drain to Source resistance of 8mΩ. This device has a P/N ratio of 8.1 and is available in IESOPP-8 package.

This N-Channel MOSFET transistor device is used in various applications such as audio amplifier, power supply, battery management, switching applications, and high-speed logic circuits. The IPD90N03S4L02ATMA1 consists of an N-type MOSFET, a junction gate FET, which is an insulated-gate field-effect-transistor used for switching and amplifying signals. The N-channel MOSFET is built on a silicon substrate coated with silicon dioxide and an N-type layer. In order for it to work, the gate should be provided with an electric charge.

When an electric charge is applied from the gate to the source of the N-channel MOSFET transistor, a controlled electric field is created between the source and the channel by the insulation material present between them. This electric field helps to control the flow of current via the channel. When the gate-source voltage is increased, the resistance between the drain and the source is reduced, thus permitting more current to flow. The IPD90N03S4L02ATMA1 has a low on-state resistance, making it a suitable device to be used in applications such as motor control, power conditioning, and power management.

The MOSFET transistor device can also be used in linear applications such as audio amplifiers, charge pumps and switching applications. The IPD90N03S4L02ATMA1 is designed to offer high speed switching with reduced power dissipation. Its low on-state voltage drop feature facilitates efficient power conversion and reduces heat generation in the circuit. Its low gate-source capacitance also helps to reduce switching time and improve signal transfer efficiency.

The IPD90N03S4L02ATMA1 is also preferred for its low charge injection and fast deactivation times. This feature helps to reduce power consumption, as the device does not continue to draw current after it is turned off. In addition, the device is known for its high noise immunity, making it a good choice in applications such as signal conditioning and signal transmission. The device also comes with various protection features such as over-voltage protection and over-temperature protection.

The IPD90N03S4L02ATMA1 is a micro-sized, surface mountable device, making it suitable for handheld and desktop devices. It offers high reliability, making it suitable for industrial applications as well. The device also meets stringent quality standards and is compliant with various industry standards such as RoHS, REACH, and HB-LED. The IPD90N03S4L02ATMA1 is a reliable and cost-effective solution for applications requiring MOSFET transistor devices.

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