IPD90N04S404ATMA1

Vgs(th) (Max) @ Id:	4V @ 35.2mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-313
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3440pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD90N04S404ATMA1 is a type of field-effect transistor (FET) that belongs to the metal-oxide-semiconductor field-effect transistor (MOSFET) family. A FET is a type of transistor which controls the electrical properties and behavior of a material by creating an electrical field in a semiconductor channel. MOSFETs are a form of FET which uses an insulated gate for the channel, creating a junction between the semiconductor channel and the gate. The IPD90N04S404ATMA1 is a single-channel MOSFET, which is characterized by its low on-state resistance and high efficient switch. IPD90N04S404ATMA1 is designed for low and medium power operation, and can be used in many applications such as motor control, power regulators and switching power converters. The, IPD90N04S404ATMA1 operates in a range of 15V to 100V and can handle a maximum power of 4W.The IPD90N04S404ATMA1 works on the principle of an insulated-gate field-effect transistor (IGFET). An IGFET consists of a source, a drain, and an insulated gate separating the source and the drain. The application of a voltage to the gate will create a potential between the source and the drain known as threshold voltage. When the threshold voltage is exceeded, current starts to flow through the channel. This concept is known as enhancement mode, as additional voltage increases current in the channel. On the other hand, the IPD90N04S404ATMA1 can also be operated in a depletion mode by applying a negative voltage to the gate. In this mode the transistor acts as a switch and the channel will be completely shut off. This is extremely useful for many applications including power regulation and controlling the speed of a motor.Overall, the IPD90N04S404ATMA1 is an ideal choice for low and medium power applications, due to its low on-state resistance and high efficiency. With its ability to operate in both enhancement and depletion mode, the IPD90N04S404ATMA1 can be used in a wide variety of applications.

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