Allicdata Part #: | IPD90N04S402ATMA1TR-ND |
Manufacturer Part#: |
IPD90N04S402ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 90A TO252-3-313 |
More Detail: | N-Channel 40V 90A (Tc) 150W (Tc) Surface Mount PG-... |
DataSheet: | IPD90N04S402ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 95µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-313 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9430pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPD90N04S402ATMA1 transistors with a P-channel and 40V drain source voltage are suitable for a wide range of applications. They are especially useful where large amounts of current are needed or where a high bias voltage is required. This MOSFET features a 80A continuous drain current and a 600V gate-to-source voltage. It also has a low gate threshold voltage of 2V.
The IPD90N04S402ATMA1 transistors are found in a variety of electronic devices, from small hand-held electronics to industrial equipment. They are used as switches in high voltage dc-dc converters, in solar panel inverters, motor control circuits, motor speed control circuits and in power management applications. The transistors are also used in the high speed logic circuits, where the low gate threshold voltage and low RDSon are key in allowing fast switching times.
The working principle of the IPD90N04S402ATMA1 transistors is quite simple. The basic idea is that a voltage applied to the gate of the transistor causes an electric current to flow between the source and drain terminals. This current is used to control the device, to switch it on and off, or to adjust its resistance. The amount of current that flows is proportional to the voltage applied to the gate. As the gate voltage increases, the current flows more strongly, and the device will allow a larger amount of current to pass through it.
The IPD90N04S402ATMA1 transistors also have an advantage over other types of transistors in that they are less prone to parasitic effects, such as power-on glitches and oscillations. This means that the transistor can switch faster, and with greater reliability. The transistor also has a much lower internal capacitance, which makes it ideal for high speed switching applications.
The IPD90N04S402ATMA1 transistors come in a range of packages, including TO-220, TO-263, SO-8, and SSOP packages. The SSOP package is particularly useful in high speed logic circuits, where its small size allows it to fit in tight spaces. The smaller packages also allow more transistors to be placed in a small space, increasing the circuit\'s performance.
In conclusion, the IPD90N04S402ATMA1 transistors are suitable for a wide range of applications. The combination of high voltage and current handling capability, low gate threshold, and low RDSon make them ideal for power management and high speed switching applications. The range of available packages provides plenty of flexibility for circuit designers, and the low parasitic effects ensure reliable and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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