IPD90N04S304ATMA1

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD90N04S304ATMA1 is an depletion type insulated gate power field effect transistor (IGFET). The device is an N-channel enhancement mode MOSFET with the source and drain terminals electrically isolated from the gate electrode. It is designed for use in applications such as power supplies, motor drives, and general purpose switching.This MOSFET is composed of a three-terminal integrated circuit (IC) with a drain terminal, a source terminal, and a gate terminal. The drain and source terminals are commonly referred to as the D and S pins, respectively. When sufficient voltage is applied to the gate terminal, the device is turned on and current flows from the drain to the source terminals. Typically, this MOSFET will be used in a P-Channel (source to drain) configuration.The operating principle of the IPD90N04S304ATMA1 involves applying a gate voltage to control the drain current flow. This is done by controlling the current between the source and drain terminals through the use of an electric field, which results in the drain current being reduced or completely shut off depending on the gate voltage applied.The gate voltage applied to the IPD90N04S304ATMA1 device must be equal to or greater than the threshold voltage of the device in order for it to turn on. The threshold voltage is essentially the voltage at which the MOSFET begins to conduct.The IPD90N04S304ATMA1 is a great device for applications that require a large amount of voltage or current handling capabilities. It is able to handle up to 150 volts of voltage or up to 30 amps of current, depending on the intended application.In addition, the IPD90N04S304ATMA1 device has a low on-resistance, which means that it has a low level of resistance when it is turned on. This is beneficial in applications where minimum power dissipation is desired. Furthermore, the device has a fast switching speed which allows it to be used in applications where high speed switching is required.The IPD90N04S304ATMA1 device is suitable for a wide range of applications and can be used in automotive, industrial, consumer, and telecommunications systems. For example, it is frequently used in power supplies, motor drives, and general purpose switching applications.The IPD90N04S304ATMA1 device is a great choice for applications that require a large amount of voltage or current handling capabilities, low power dissipation, and fast switching speeds. It is an ideal device for people looking for a reliable and durable MOSFET.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description