IPD90P04P4L04ATMA1 Datasheet/PDFThe IPD90P04P4L04ATMA1 is a single N-Channel Enhancement Mode power field effect transistor (FET). It is a highly integrated device that combines a very low on-resistance (RDS(on)) value, with fast switching times and a very low input capacitance, resulting in an excellent balance between all of its parameters.
Main Features and Benefits
- Very low RDS(on)
- Extremely low input capacitance
- Stable on-resistance over a wide temperature range
- Very low gate charge
- Easy to use
Applications
The IPD90P04P4L04ATMA1 is widely used in a variety of applications where its unique combination of features make it an ideal solution. These include DC-DC converters, portable electronic devices, mobile communications and servers. It is also used in automotive, lighting, and industrial applications.
Working Principle
The IPD90P04P4L04ATMA1 operates on the principle of enhancement mode. This means that it is a normally-off device, meaning that it does not require a gate-voltage in order to turn on. This makes it a very efficient device. Instead, the on state is created by inducing a positive voltage on the gate. When the gate voltage is raised above a threshold, the current between the source and the drain is allowed to flow. The gate voltage then controls the current flow. The device is turned off again by reducing the gate voltage.
Conclusion
The IPD90P04P4L04ATMA1 is a single N-Channel Enhancement Mode power field effect transistor (FET) that is widely used in a variety of applications. Its combination of features make it an ideal solution, ranging from DC-DC converters, portable electronics, and mobile communication to automotive, lighting, and industrial applications. It operates on the principle of enhancement mode, meaning that it does not require a gate-voltage in order for its to be on, but is instead controlled by a positive gate voltage. The device is off again when the gate voltage is reduced.