IPD90N06S404ATMA2

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IPD90N06S404ATMA2 is a power MOSFET that belongs to the family of single N-channel field-effect transistors (FETs). It is mainly used to switch power from and to load circuits in high-frequency applications, including switching regulators and DC/DC converters.

A power MOSFET is based on the same MOS (metal-oxide-semiconductor) technology used for many other types of FETs. Instead of using current passing through a channel between the source and drain, this type of FET uses a gate to induce an electrical field that extends from the gate to the source and drain. The gate is held at a voltage potential, and when this voltage potential is lowered, current passes through the channel. This type of transistor has a significant advantage over the traditional bipolar MOSFETs because it can carry much higher currents and provides good switching characteristics at lower voltages.

The IPD90N06S404ATMA2 power MOSFET has a maximum drain current rating of 20 amps and a maximum drain-source voltage rating of 25 volts. It is available in a TO-220 package and comes with an integrated fast-recovery body diode. It is designed for high-frequency applications, such as DC/DC converters, power supplies, and motor control. It offers low gate charge, low on-resistance, and low input capacitance, which makes it suitable for high-temperature operation.

The IPD90N06S404ATMA2 power MOSFET has a simple and straightforward design. It consists of a gate, a source, a drain, and a body. It works by using an electric field that is generated by the gate to pass current from the source to the drain. This electric field is generated when a suitable voltage is applied to the gate. When the gate voltage is zero, the power MOSFET is in the off-state, and no current is allowed to pass through the channel. When the gate voltage is increased, the power MOSFET enters the on-state, and current can pass through the channel.

The main benefit of the IPD90N06S404ATMA2 power MOSFET is its low on-resistance. This enables it to provide good efficiency in applications that require high power. Additionally, it can also be used in applications that require high-switching frequency. This is because it has a fast-recovery body diode that ensures that any potential inductive kickback in the circuit is minimized.

The IPD90N06S404ATMA2 power MOSFET can be used in a wide variety of application fields, such as motor control, DC/DC converters, power supplies, and more. Moreover, its low on-resistance and integrated fast-recovery body diode make it ideal for high-frequency applications. Its simple and straightforward design combined with its high power capabilities make it an excellent choice for power switching applications.

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