| Allicdata Part #: | IPD90N06S4L06ATMA2-ND |
| Manufacturer Part#: |
IPD90N06S4L06ATMA2 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 90A TO252-3 |
| More Detail: | N-Channel 60V 90A (Tc) 79W (Tc) Surface Mount PG-T... |
| DataSheet: |  IPD90N06S4L06ATMA2 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 40µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3-11 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5680pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 90A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The IPD90N06S4L06ATMA2 is a type of field effect transistor (FET) that is part of a family of MOSFETs (metal–oxide–semiconductor field-effect transistors). This device is single-channel, meaning that it is able to control a single circuit, and it is commonly used in many applications owing to its efficient power handling capability and various other features. This article discusses the application field of the IPD90N06S4L06ATMA2 and its working principle.
The IPD90N06S4L06ATMA2 is an electronic component used in numerous circuits to control high current and voltage, such as in motor control applications, switching power supplies, and high-efficiency LED lighting. Its features are designed for efficiency, offering integrated ESD protection, low gate charge and low RDS(on) resistance. This makes the IPD90N06S4L06ATMA2 is well-suited for applications such as AC-DC converters, chargers, and other power applications that require high efficiency. Additionally, the IPD90N06S4L06ATMA2 offers good logic level operation, allowing for easier interfacing with digital control circuits and microprocessors.
The IPD90N06S4L06ATMA2 uses metal–oxide–semiconductor field-effect transistor (MOSFET) technology to work. Basically, a MOSFET is a voltage-controlled, insulated-gate field-effect transistor that uses the electric field of a metal gate laid on top of an interface of conducting (i.e. semiconducting) material. This controlling of the electric field means that the voltage applied between the gate and the source affects the current flow between the drain and the source. In the case of the IPD90N06S4L06ATMA2, a positive voltage applied to the gate over the source causes the MOSFET to turn ‘on’ and allow current to flow through the MOSFET.
In summary, the IPD90N06S4L06ATMA2 is a single-channel FET that is used in a wide variety of electrical circuits and applications. It is designed for efficiency and offers features such as ESD protection and low gate charge and RDS(on) resistance. Additionally, this device uses MOSFET technology, allowing it to be controlled by the application of a positive current to the gate over the source, thus turning the MOSFET ‘on’.
The specific data is subject to PDF, and the above content is for reference
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