IPD95R2K0P7ATMA1

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The IPD95R2K0P7ATMA1 is a Field-Effect Transistor (FET) designed for applications such as power management, industrial automation and control, audio/video, and LED lighting. FETs are solid-state devices that are generally used as switches, amplifiers, and oscillators. They can be used to control the flow of electricity, depending on the input signal applied to the gate terminal.

IPD95R2K0P7ATMA1 is classified as a single n-channel MOSFET, which is a type of FET that uses metal-oxide semiconductor technology. These devices are widely used in many types of equipment because they are capable of operating at high speeds and with low power consumption.

This device has a breakdown voltage of 55V, an on-resistance of 2kohm, and a gate capacitance of 7pF. It is capable of a maximum power dissipation of 1.0 W, which makes it suitable for applications that require higher power handling. Additionally, it has an operating temperature range of -55℃ to +125℃, making it suitable for a wide range of temperature operating environments.

The working principle of the IPD95R2K0P7ATMA1 is based on the Field Effect phenomenon. A voltage applied to the gate terminal creates an electric field and alters the conductivity of the channel between the source and drain terminals. By controlling the electric field, the current flow through the channel can be varied, allowing the device to act as a switch or amplifier, depending on the application.

The IPD95R2K0P7ATMA1 FET is an ideal solution for a wide range of applications due to its features, such as low power consumption, high operating speed, and wide temperature range. It is suitable for both digital and analog circuits, where it can be used as an amplifier, switch, or oscillator.

In summary, the IPD95R2K0P7ATMA1 is a single n-channel MOSFET used for applications such as power management, industrial automation and control, audio/video, and LED lighting. It has a breakdown voltage of 55V, an on-resistance of 2kohm, and a gate capacitance of 7pF. The device works by controlling the electric field created by the gate terminal, allowing it to act as a switch or amplifier depending on the input signal applied. Furthermore, it has a low power consumption and wide operating temperature range, making it suitable for a variety of different applications.

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