IPD90N10S4L06ATMA1 Allicdata Electronics
Allicdata Part #:

IPD90N10S4L06ATMA1TR-ND

Manufacturer Part#:

IPD90N10S4L06ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO252-3
More Detail: N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG...
DataSheet: IPD90N10S4L06ATMA1 datasheetIPD90N10S4L06ATMA1 Datasheet/PDF
Quantity: 2380
Stock 2380Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD90N10S4L06ATMA1 is a product of Advanced Power Electronics Corporation, an American semiconductor supplier. It is a 600V trench-gate field-effect transistor (FET). This FET is widely used in power management, motor control and computing applications. This article will discuss its application fields and working principles.

Application Fields: The IPD90N10S4L06ATMA1 is a single N-channel enhancement mode FET, which is best suited for switching applications.

It is commonly used for power switching, motor control, and in digital logic applications. It is also commonly used as a transistor in various electronic products, such as digital cameras, digital video recorders, audio equipment, and home automation products. In addition, it is used in the production of digital displays, microcontrollers, automotive electronics, wind turbines, and other renewable energy systems.

Working Principle: As an N-channel enhancement mode FET, the IPD90N10S4L06ATMA1 is an ideal switch when the load current needs to be accurately controlled. It works by controlling the voltage across the FET. The FET’s gate terminal is responsible for controlling the current flow by diverting electrons from the source to the drain. When the gate terminal is held at a higher voltage than the source, the electrons flow through the FET, forming a conductive channel.

This conductive channel, or “channel”, allows the current to flow from the source to the drain. The channel can then be controlled by adjusting the voltage across the gate terminal. This allows the IPD90N10S4L06ATMA1 to act as an ideal switch by controlling the current from the source to the drain.

The IPD90N10S4L06ATMA1 is an efficient FET because it requires only a low gate voltage to control the current through it. As a result, it has a low input resistance and is able to switch current efficiently with minimal power loss.

To summarise, the IPD90N10S4L06ATMA1 is a single N-channel enhancement mode FET and is best suited for switching applications. It is used in electronics products, power management and motor control. It works by controlling the voltage across the FET, and forms a conductive channel between the source and drain when the gate voltage is higher than the source. This allows the IPD90N10S4L06ATMA1 to control current with minimal loss, making it an efficient and reliable switch.

The specific data is subject to PDF, and the above content is for reference

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