IPD90N10S406ATMA1 Allicdata Electronics
Allicdata Part #:

IPD90N10S406ATMA1-ND

Manufacturer Part#:

IPD90N10S406ATMA1

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO252-3
More Detail: N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG...
DataSheet: IPD90N10S406ATMA1 datasheetIPD90N10S406ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.67174
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD90N10S406ATMA1 is a short-channel, low-voltage N-channel enhancement transistor that belongs to the FET family of transistors. It is suitable for use in wide range of applications and has the ability to operate at low voltages while providing relatively high current. This makes it an excellent choice when designing circuits that need to maximize efficiency while minimizing power losses.

The most common application fields of the IPD90N10S406ATMA1 are power management, low to medium speed logic circuits, switching and amplification. Its high slew rates make it suitable for switching applications in which very fast responses are needed. This capability makes the IPD90N10S406ATMA1 a great choice for power MOSFETs, driving motor controllers, speed controllers and motor-control applications.

The IPD90N10S406ATMA1 is a junction field-effect transistor (JFET). It has an N-type gate region that is connected to an N-type channel region and a P-type source region. This structure allows it to control current flow between the source and the drain. The device is normally in the off-state and needs to be switched on by means of an external gate signal supplied by a voltage source.

When the gate signal is applied, current will flow from the source to the drain, depending on the magnitude of the signal. An increase of the gate voltage will cause an increase of the drain current, and a decrease of the gate voltage will cause the drain current to decrease. This relationship between the gate voltage and drain current is known as the transfer characteristic. The amount of current that can flow through the IPD90N10S406ATMA1 also depends on the drain-source voltage.

The IPD90N10S406ATMA1 has good thermal stability, high input impedance and good power dissipation capability. This makes it ideal for applications with high temperature environments, such as motor control systems. In addition, its high voltage and current ratings make it suitable for use in power management circuits. The device is typically packaged in a 3-pin-SOT23 package, which allows for a small surface-mount mounting configuration.

In summary, the IPD90N10S406ATMA1 is a short-channel, low-voltage N-channel enhancement transistor that belongs to the FET family of transistors and is suitable for a wide range of applications. It is characterized by its good thermal stability, high input impedance, good power dissipation capability, are easy to use and have the capability to operate at low voltages while providing relatively high current. This makes it an excellent choice when designing circuits that need to maximize efficiency while minimizing power losses.

The specific data is subject to PDF, and the above content is for reference

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