IPD95R1K2P7ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 140µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	478pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	950V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IPD95R1K2P7ATMA1 field-effect transistor (MOSFET) is a single, very reliable and versatile transistor designed for power switching applications. This MOSFET is formulated with an ultra-low profile and a guaranteed electrical performance, allowing it to be used in a wide variety of power switching applications such as motor control, voltage regulation, switching lighting, and many other applications.The IPD95R1K2P7ATMA1 is designed for use in low-voltage, high-current applications and it is very commonly used as a switch for power supply units. This transistor can handle power ratings up to 80V, 30A and it can reach switching frequencies up to 1.7MHz which makes it suitable for low-voltage and low-speed applications.The IPD95R1K2P7ATMA1 is a single-channel MOSFET and it has a design that ensures fast switching time and low on-resistance which is necessary for efficient operation. The device is rated with a 80V, 30A, and it features an ultra-low profile with a guaranteed operational temperature up to 150°C and a guaranteed junction to case thermal resistance of only 2.1°C/W.The essential working principle of the IPD95R1K2P7ATMA1 is similar to that of other power MOSFETs. It works by passing an electric current through the gate terminal so that the channel between the source and drain terminals is opened or closed. This is done by controlling the electric field between the gate and the source, thus allowing current to flow between the drain and the source when the correct voltage is applied and cutting it off when it is removed.The IPD95R1K2P7ATMA1 can be used in different applications and it offers excellent power switching characteristics and electrical performance. The device is a fast-switching, efficient power transistor which can handle high voltages and currents, making it suitable for a wide range of different applications. The IPD95R1K2P7ATMA1 is perfect for use in many different power switching applications such as lighting switching, motor control, voltage regulation and many more. The device can also be used in other applications such as DC-DC converters and power conditioning systems.The IPD95R1K2P7ATMA1 is an excellent choice for a wide variety of power switching applications since it offers a very reliable and efficient performance with extremely low on-resistance and fast switching time. It is rated with a power rating of 80V, 30A and it can reach switching frequencies up to 1.7 MHz, which makes it suitable for low-voltage and low-speed applications. Additionally, the IPD95R1K2P7ATMA1 offers an ultra-low profile with a guaranteed operational temperature up to 150°C and a guaranteed junction to case thermal resistance of only 2.1°C/W. This is perfect for use in situations with limited space and high temperatures. Overall, the IPD95R1K2P7ATMA1 is a reliable and efficient single-channel power transistor that is perfect for use in low-voltage, high-current applications. It offers a fast switching time and low on-resistance, as well as an ultra-low profile and high temperature rating, making it suitable for a wide range of different applications.

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