IRF5803D2TRPBF

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	1110pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	112 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.4A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF5803D2TRPBF is an advanced power MOSFET (metal-oxide-semiconductor field-effect transistor) that offers superior features and performance in a single-package. Developed by international semiconductor manufacturer International Rectifier (IR), the IRF5803D2TRPBF offers a low RDS-on of 4.5 Ω, a virtually constant Qg of 15 nC, and an ultra-low on-state resistance, which makes it ideal for high power applications.IRF5803D2TRPBF is designed with a special very low-impedance package and a self-aligning P channel MOSFET structure. This design ensures high frequency switching performance and a low on-resistance with good thermal characteristics. The width of the MOSFET channel is reduced for a higher on-resistance, and the output capacitance is designed for a lowered capacitance value.The IRF5803D2TRPBF MOSFET features an integrated high-intensity electrostatic shield that helps to reduce capacitive coupling and minimize ESD (electrostatic discharge). Its built-in self-protection mechanism is also ideal for eliminating parasitic oscillations, eliminating thermal runaway issues, as well as minimizing shoot-through currents.Widely used in power supply and motor control, the IRF5803D2TRPBF can be used in applications such as power factor correction, solar inverters, power supply units, high-voltage DC/DC converters, motor control and switching power supplies.Working Principle of the IRF5803D2TRPBFThe IRF5803D2TRPBF metal-oxide-semiconductor is a four-terminal device consisting of a gate, drain and source terminals and a bulk substrate. Electric charges can be controlled or regulated by applying an electric field to the gate terminal, which results in a slight change in the electric field of the substrate.This triggers a build-up of electron charge in the source and drain regions, creating an inversion layer at the interface of the two electrodes. This effect increases the conductivity of the inversion layer and allows electrons to flow across the semiconductor junction.The voltage applied to the gate of the FET raises or lowers the actual potential barrier between the source and the drain, which changes the electrical current flowing through the FET. By controlling the current level, the FET can be made to act as either an amplifier or switch, which makes the device ideal for switching power applications.In conclusion, the IRF5803D2TRPBF is an ideal choice for a wide variety of power applications. Thanks to its special low-impedance package and self-aligning structure, its high-frequency switching performance makes it extremely efficient and reliable. Its low on-resistance ensures a high level of energy efficiency, while its integratedhigh-intensity electrostatic shield helps reduce capacitive coupling and prevents ESD.

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