
Allicdata Part #: | IRF6611TRPBFTR-ND |
Manufacturer Part#: |
IRF6611TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 32A DIRECTFET |
More Detail: | N-Channel 30V 32A (Ta), 150A (Tc) 3.9W (Ta), 89W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4860pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF6611TRPBF is a surface-mountable, low-threshold enhancement-mode N-Channel MOSFET transistor with a drain-source breakdown voltage of 900 V and 660 mohm maximum on-state (RDS-on) resistance. This MOSFET is useful in constructing power circuits, providing excellent thermal performance and dynamic response.
The IRF6611TRPBF application field includes making a high side MOSFET switch like a motor control circuit (brushless motor drivers), a motor control circuit, a power switch for DC power supply current, an overvoltage protection application, and a time delay circuit. It can also be used for the construction of high power audio amplifiers and radio frequency (RF) transmitters and receivers. In general, it is used in applications that require high efficiency, low threshold voltage and low on-state resistance.
The working principle of the IRF6611TRPBF is based on the fact that when an electric field is applied across an insulating material, like a semiconductor, the electric field polarizes the molecules of the semiconductor, causing it to act like a transistor with the ability to switch current on and off. This is what is known as “field effect”.
When the IRF6611TRPBF is applied, it operates as a three-terminal circuit. The drain, gate and source pins are activated, allowing current to flow between them. The drain terminal receives a positive voltage, while the gate receives a negative voltage. When the negative voltage is high enough, the electric field polarizes the molecules of the semiconductor, causing current to flow through the device. This is known as “gate capacitance”.
The other factor that affects the operation of the IRF6611TRPBF is the “on-resistance” (RON). This is the minimum amount of drain current that the device can deliver at a given voltage. The lower the RON, the better the device will be able to switch on and off quickly. The IRF6611TRPBF has a RON of 660 mOhms, which is lower than many higher-resolution devices. This low “on-resistance” makes the device extremely versatile and able to handle high currents in a fast manner.
With its versatile application field and working principle, the IRF6611TRPBF is an excellent choice for a wide range of applications. Its versatile design makes it well suited for switching, motor control, power supply current control and overvoltage protection applications. Its low on-resistance and drain current handling capabilities make it well suited for applications where high power and switching speed are required. Because of its low RON and diverse application field, the IRF6611TRPBF is an excellent choice for every circuit design engineer.
The specific data is subject to PDF, and the above content is for reference
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