IRF6626TR1

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	DirectFET™ Isometric ST
Supplier Device Package:	DIRECTFET™ ST
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2380pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	5.4 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta), 72A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF6626TR1 is a single N-Channel Metal-Oxide Field-Effect Transistor (MOSFET) device developed for use in high-performance switching applications. The device offers low on-resistance and fast switching speeds, making it suitable for use in high-speed, high-power switching applications. The IRF6626TR1 is an N-Channel MOSFET that uses a metal-oxide insulating layer to create an electric field between the drain and the gate. This field can be used to control the flow of electrons between the drain and the source. The device\'s low on-resistance and fast switching speeds make it well-suited for use in high-power, high-speed switching applications.The metal-oxide layer of the IRF6626TR1 is made up of a metal-oxide semiconductor (MOS) layer which is formed between the drain and the gate by thermal oxidation. This layer acts as a conductive barrier between the two metal electrodes, allowing only electrons to flow through the device. This allows the MOSFET to be used to control the current flow between the drain and the source. The IRF6626TR1 has many advantages over traditional transistors, such as lower thermal resistance, higher switching speeds, smaller size, and higher packing density. These characteristics make the IRF6626TR1 ideal for use in high-power, high-speed switching applications. The IRF6626TR1 can be used in a range of applications. These include motor control, power conversion, amplifier circuits, and other power switching applications. In motor control applications, the device can be used to switch between high and low speed operations to provide precise speed control. In power conversion applications, the device can be used to regulate current flow between the input and output. The device can also be used in amplifier circuits to control the gain of the output signal. In addition, the IRF6626TR1 can also be used in high-speed switching applications, such as digital logic circuits and data communication systems. The device\'s low on-resistance and fast switching speeds make it well-suited for use in these applications.The IRF6626TR1 is an efficient and reliable device that is suitable for a wide range of applications. The device offers low on-resistance, fast switching speeds, and small size, making it an ideal choice for high-power and high-speed switching applications. The device can also be used in motor control, power conversion, and amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description