
Allicdata Part #: | IRF6633TR1-ND |
Manufacturer Part#: |
IRF6633TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 16A DIRECTFET-MP |
More Detail: | N-Channel 20V 16A (Ta), 59A (Tc) 2.3W (Ta), 42W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | DirectFET™ Isometric MP |
Supplier Device Package: | DIRECTFET™ MP |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 59A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF6633TR1 is a product of International Rectifier, as part of their most advanced MOSFET (metal-oxide-semiconductor field-effect transistor) family. It is optimized for use in high-voltage, high-current switching applications. This particular device is a trench SOT-223 (small outline transistor) that is contained in an ultrasmall package. As such, the IRF6633TR1 can offer great performance with a much smaller footprint, making it useful in a wide variety of applications.
Application Area
The IRF6633TR1 can be used in high-voltage, high-current switching applications. It is designed to withstand a breakdown voltage of 200V and a drain current of 20A. This makes it suitable for use in automotive circuits, computer power supplies, and power inverter circuits. It can also be used as an automotive electronic control unit (ECU) switch, an infrared detector, and a mobile power-supply switch. The package size makes this device especially suited for automotive and portable applications that require a compact, space-saving design.
Working Principle
The IRF6633TR1 is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. The MOSFET is an extremely versatile type of transistor because it can act as either an amplifier or as a switch. This means that it can be used to amplify small signals or to simply switch larger currents on and off. In the case of the IRF6633TR1, it is used as a switch in high-voltage and high-current applications.
The MOSFET works by controlling the flow of current through a channel between the Drain and Source terminals. A voltage is applied between the Gate and Source terminals, which creates an electric field inside the MOSFET. This electric field controls the current through the channel, allowing it to be shut off when no voltage is applied, and turned on when a voltage is applied. This makes the MOSFET an efficient switch, and it is why it is often used in high-voltage and high-current applications.
Conclusion
The IRF6633TR1 is an MOSFET device, which is an extremely versatile type of transistor that can be used as an amplifier or a switch. Its small size and high-voltage, high-current capabilities make it ideal for use in automotive, computer and power inverter circuits. It can also be used in mobile and portable applications as a switch thanks to its compact size. The MOSFET works by controlling the flow of current through a channel between the Drain and Source terminals and can be turned on and off by applying a voltage between the Gate and Source terminals.
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