IRF6635TR1PBF

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5970pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	71nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 180A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF6635TR1PBF is an n-channel power MOSFET that is designed specifically for industrial and communications applications. It is produced by International Rectifier (IR). It is usually referred to as “HexFET”, which is the trademark name given to it by IR. This innovative MOSFET is used in various applications nationwide. It is particularly designed to overcome the inefficiencies of most standard MOSFETs and offers superior performance, reliability, and a wide operating temperature range.The IRF6635TR1PBF is a three-terminal power MOSFET that consists of a source, drain, and gate. The source and drain are connected to the semiconductor device in which the MOSFET is used, and the gate can be used to control the current flowing through the source and drain. The gate is controlled by an external voltage or current, which allows the flow of current to be regulated.The IRF6635TR1PBF is a high-efficiency MOSFET, meaning that it is more efficient than standard MOSFETs when it comes to dissipating power, as well as switching frequencies. This is due to its low capacitances and low on-resistance characteristics. The device is designed to work with voltages ranging from 20 volts up to 350 volts. It also offers fast switching speeds and a low threshold voltage of 2.5V, allowing it to work with a wide range of logic levels.The IRF6635TR1PBF is most utilized in industrial and communications applications, because of its superior performance and reliability. It is often used in HVAC equipment, motor control, power switching, and power conversion applications. It can also be used in various types of communication equipment such as X-ray systems, modems, satellite receivers, and control systems and many other applications.The IRF6635TR1PBF operates by using electric charge. When the gate of the device is supplied with a voltage, electrons are attracted to the gate and move through the device. This attracts holes from the drain and source to the gate, which creates a current. This current then allows current to flow from the source to the drain. The threshold voltage of the device is the voltage which needs to be applied to the gate in order to start the flow of current.The IRF6635TR1PBF is a very efficient and reliable device that provides excellent performance in industrial and communication applications. It is designed with a low threshold voltage allowing it to work with a wide range of logic levels and is designed to work with voltages ranging from 20 volts up to 350 volts. The device is designed to dissipate power efficiently and offers superior reliability and a wide operating temperature range. The IRF6635TR1PBF is a versatile device, making it ideal for use in industrial and communications applications.

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