IRF6665TR1

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The IRF6665TR1 is a single N-Channel enhancement mode power MOSFET transistor, designed for use as a switching device in applications such as DC/DC converters and motor controllers. It has an advanced process technology that combines high side current sensing and low side on resistance (RDS(ON)), which enables efficient driving for EMI control and system level optimization. This device is available in an advanced Trench process technology with a low package parasitics, allowing superior switch performance at high temperature with low gate drive power.

The IRF6665TR1 has a maximum on current (ID) rating of up to 70A and an on-resistance (RDS(ON)) of just 12mΩ, making it an ideal choice for switching applications where high current and low on-resistance are needed.

The IRF6665TR1 MOSFET also has a wide range of built-in temperature protection features. It has a temperature operating range of -55°C to +150°C, and the internal structure of the device is designed for operation for over-temp protection. It also offers over-voltage protection, short circuit protection and under-voltage protection for improved system reliability.

For applications involving high frequency switching, the MOSFETs provide low switching losses and improved system efficiency. The low input capacitance (CISS) of the device and low switching losses ensure high switching speeds relative to other MOSFETs, while the low gate charge (Qg) enables fast switching times.

The MOSFETs have an ultra-low Total Gate Charge (Qg_tot) of just 65nC, which enables very fast switching speeds, even when used with a low gate drive voltage. The gate drive current is only 2A, making it an ideal choice for applications where gate drive current is limited or not available.

The IRF6665TR1 MOSFET is specially designed to provide reliable operation in high temperature environments. The device is constructed with a high temperature soft-bond die that improves the reliability and durability of the device, even when operating in extreme temperatures.

The device also features a unique design that eliminates latch-up, which can be a major issue in power MOSFETs. The internal gate-source structure eliminates the need for an external reverse bias gate field-effect transistor (FET) to prevent latch-up, allowing for smooth and reliable operation.

In summary, the IRF6665TR1 MOSFET is an ideal choice for applications requiring high current and low RDS(ON) in a single package. Its low input and total gate charge, low switching losses, and temperature protection features make it an excellent choice for applications where reliability and performance are critical.

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