
IRF6729MTRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF6729MTRPBFTR-ND |
Manufacturer Part#: |
IRF6729MTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 31A DIRECTFET |
More Detail: | N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6030pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 31A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 190A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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, HTMLIRF6729MTRPBF is a popular and versatile component in the field of transistors. It is a single N-channel Field Effect Transistor (FET) manufactured by a semiconductor company called International Rectifier. This component is specially designed for applications that require high efficiency, power switching, and power management. It is an essential component for systems that need current control, efficient power management, and low-impedance control.
The IRF6729MTRPBF is a silicon-based FET with a maximum drain-source voltage (Vds) of approximately 175V. It also features a maximum drain current rating (Id) of up to 10A, meaning it can carry a high current load. The P-channel FET comes in an easy-to-mount TO-220 package, and has an on-resistance rating of 400 mOhms. This component has a fairly low gate threshold voltage (VTH) of 1V and an inherently high input capacitance rating, which allows this component to be used in high-frequency applications.
The main feature of this device is its ability to offer very low turn-on and turn-off times with minimal gate charge (Qg), allowing it to be used with fast switching applications. This low gate charge increases power switching efficiency and reduces total power consumption. It also features a low on-resistance of 400 mOhms, which helps reduce overall losses and improves system efficiency.
The working principle of the IRF6729MTRPBF is based on the basic operation of any FET. This device is a voltage-controlled device, meaning that the gate voltage of the device will control the flow of current through the source-drain channel. It can be switched on by applying a voltage between the gate and the source of the device. This will effectively open up the channel and allow current to move from the drain to the source. The level of current will be regulated by the applied voltage. A reverse voltage between the gate and the source can be used to turn off the device, allowing the current flow to be interrupt.
The IRF6729MTRPBF is a versatile device mainly used in high-efficiency and high-power switching applications, such as DC-DC converters, motor controller circuits, power regulators, and power factor correction circuits. It can also be used in high-frequency switching applications such as switching electrical power to a load. This device has been used in a variety of automotive applications, such as airbag systems, immobilizers, and fuel injectors.
In conclusion, the IRF6729MTRPBF is a high-performance, high-efficiency and versatile single N-channel FET with various capabilities for controlling current, designing for power electronics and switching applications. The device offers low gate charge and on-resistance, making it ideal for fast-switching applications and helping to reduce power losses. This device is widely used in automotive and power electronics applications due to its low-turn-on and turn-off times and its high input capacitance.
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