Allicdata Part #: | IRF6893MTRPBF-ND |
Manufacturer Part#: |
IRF6893MTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 29A MX |
More Detail: | N-Channel 25V 29A (Ta), 168A (Tc) 2.1W (Ta), 69W (... |
DataSheet: | IRF6893MTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 100µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3480pF @ 13V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 168A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF6893MTRPBF is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) with particle metal technology. It is an active component used in electronic circuits and it is mostly used for switching applications. The IRF6893MTRPBF is an excellent choice for high voltage and high current applications, making it one of the most popular MOSFETs in the market.
The IRF6893MTRPBF is a high voltage MOSFET that is capable of withstanding a drain-to-source voltage of up to 1,100V and a gate-to-source voltage of up to 300V. The device also has an impressive maximum junction temperature of 150°C and a high drain-to-source breakdown voltage of 950V. The MOSFET also has an on-resistance of only 0.44 ohms and an input capacitance of 540pF. The maximum drain current through the MOSFET is 18A and its maximum power dissipation is 140W.
In terms of applications, the IRF6893MTRPBF is most commonly used for switching applications such as DC-DC converters, motor drives, photovoltaic inverters, and even automotive applications. It can also be used for switching applications in servers, telecommunication systems, and consumer electronics. This makes the device a great choice for applications that require high voltage and high current load switching.
The working principle of the IRF6893MTRPBF is relatively simple. The device is composed of two different types of layers; a source and a drain. The source and drain are both connected to the gate, which is the control element of the MOSFET. When a voltage is applied to the gate, electrons are attracted to the gate, making it more conductive. This increases the current between the source and the drain. On the other hand, if the voltage is decreased, the gate is less conductive, decreasing the flow of current.
Overall, the IRF6893MTRPBF is an excellent choice for high voltage and high current applications. It is a widely used MOSFET in the market and can be used for a variety of applications. The device is also relatively easy to use in electronic circuits and its working principle is easy to understand.
The specific data is subject to PDF, and the above content is for reference
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