Allicdata Part #: | IRF8308MTR1PBFTR-ND |
Manufacturer Part#: |
IRF8308MTR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 27A MX |
More Detail: | N-Channel 30V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | IRF8308MTR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4404pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF8308MT-RPBF is a high-performance, dual N-channel enhancement mode insulated gate field effect transistor (IGFET) manufactured by Vishay Intertechnology. With a rated voltage of 100V and a maximum current rating of 6A, it is ideal for a broad range of low-power digital and analog applications that require isolated power supply and signal accuracy. It also has a low on-resistance and is suitable for high-frequency applications. In addition, the device offers high performance, low gate threshold voltage, low capacitance and low gate-drain capacitance. This device is available in a 3-pin standard power package and can be used in a variety of applications including motor control, power supplies, motor control, and audio power amplifiers.
The IRF8308MT-RPBF is constructed of a silicon substrate, with two N-type diffusion regions and a gate oxide layer. The two N-type diffusion regions act as source and drain regions, and the gate oxide layer forms a channel in between. The current that passes through the channel is controlled by the voltage applied to the gate terminal. This is the principle of operation of an IGFET.
The IRF8308MT-RPBF has a maximum drain-source on-resistance of 0.22 milliohms and a maximum drain-source breakdown voltage of 100V. It also has a maximum gate-source breakdown voltage of 16V and a gate-source leakage current of 3 microamps. The device has an on-resistance of 0.14 milliohms, a maximum current gain of 200 and an on-state drain current of 10A at 25°C.
The device is suitable for applications requiring low gate threshold voltage and low drain-source capacitance, such as low-voltage and low-power motor control, power supplyregulators, microprocessor power management, and audio power amplifiers. It is also suitable for high-frequency applications, as it has a low gate-drain capacitance.
The IRF8308MT-RPBF has a wide range of application fields, from industrial control and automation, to consumer electronics, home and office appliances. It is also used in automotive, military and aerospace systems, as it offers superior performance and reliability.
In conclusion, the IRF8308MT-RPBF is an N-channel enhancement mode insulated gate field effect transistor (IGFET) with a wide range of application fields. It is available in a 3-pin standard power package and has a rated voltage of 100V and a maximum current rating of 6A. The device also has a low on-resistance and is suitable for high-frequency applications. Thanks to its low gate threshold voltage, low capacitance and low gate-drain capacitance, it is used in a variety of applications including motor control, power supplies, motor control, and audio power amplifiers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF8252TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 25A 8-SON... |
IRF840B | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 8A TO-22... |
IRF820ASPBF | Vishay Silic... | -- | 1110 | MOSFET N-CH 500V 2.5A D2P... |
IRF840LCPBF | Vishay Silic... | -- | 785 | MOSFET N-CH 500V 8A TO-22... |
IRF830ASPBF | Vishay Silic... | 1.45 $ | 77 | MOSFET N-CH 500V 5A D2PAK... |
IRF830SPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF8327STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A SQN-C... |
IRF8302MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 30V 31A MXN-C... |
IRF8304MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 28A MXN-C... |
IRF8308MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 27A MXN-C... |
IRF8306MTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 23A DIREC... |
IRF8306MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 23A DIREC... |
IRF8010PBF | Infineon Tec... | -- | 497 | MOSFET N-CH 100V 80A TO-2... |
IRF840ASPBF | Vishay Silic... | -- | 977 | MOSFET N-CH 500V 8A D2PAK... |
IRF840 | STMicroelect... | -- | 117 | MOSFET N-CH 500V 8A TO-22... |
IRF830 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4.5A TO-... |
IRF820 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4A TO-22... |
IRF820S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF830S | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF840S | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF830AS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A D2PAK... |
IRF840A | Vishay Silic... | -- | 380 | MOSFET N-CH 500V 8A TO-22... |
IRF840AS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF840L | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 8A TO-26... |
IRF820AS | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF840LCS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF820A | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF820AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF830AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A TO262... |
IRF840LCL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A TO-26... |
IRF8113PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 17.2A 8-S... |
IRF820ASTRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820ASTRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF820STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820STRR | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF830ASTRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A D2PAK... |
IRF830L | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A TO-... |
IRF830STRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF830STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A D2P... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...