IRF820L

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	360pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>An IRF820L is a popular field effect transistor (FET) used in various circuits and applications. It is a n-channel, enhancement mode FET with a lower resistance than b-channel FETs. This device has a wide range of application fields and is a reliable choice for many digital, industrial and consumer applications.</p><p>The IRF820L is more efficient than traditional transistors, meaning it uses less electricity. This makes it an ideal choice for low-power applications, such as hazardous environment circuits, two-way radios and home automation systems. It is also suitable for LED lighting and power management operations. Other applications where the IRF820L can be used include motor control, switching supplies, linear amplifiers, audio, and industrial automated equipment.</p><p>The IRF820L is built on a compact package that allows for small-size circuits. The device’s low on-resistance, low thermal resistance and low threshold voltage capabilities all make it perfect for miniaturization, as well as being a cost-effective solution. The source-to-body diode also has a low on-resistance, allowing for even lower power consumption, and the small footprint makes it suitable for dense PCB designs.</p><p>The IRF820L is a MOSFET, which is a type of FET that is designed to efficiently conduct and switch electricity. A FET is a field-effect transistor that uses an electric field to affect and control the movement of electrons. The IRF820L uses electron flow to create current in one direction, and is used in basic amplifiers and voltage regulators.</p><p>The IRF820L has many advantages. Its low resistance leads to a higher cut-off frequency, which allows for better performance in applications such as switches and semiconductors. It also has a wide frequency range, allowing for higher transfer rates in digital applications.</p><p>The working principle of the IRF820L is based on the two-port network concept, where the FET acts as a transistor switch. When a gate voltage is applied, a current passes from the source to the drain and creates a pinch off effect by reducing the resistance between the two electrodes. This reduces the gate voltage and creates a depletion region. The size of the depletion region determines the current flow through the transistor and thus controls the amount of power that can pass through.</p><p>In summary, the IRF820L is a reliable, cost-effective and highly efficient choice for applications such as low-power, home automation, motor control, and hazardous environment circuits. It uses a two-port network principle, where an applied gate voltage creates a depletion region that controls the amount of current flowing through the device. Additionally, the device has a low thermal resistance and low threshold voltage, which make it a great fit for miniaturized designs.</p>

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