IRF820

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF820 Application Field and Working Principle

IRF820 is a power MOSFET that operates by employing an insulated gate. It has a high input impedance and a low on-state resistance which makes it an ideal choice for applications involving power flow regulation, switching, and voltage level shifting. The device was designed for easy replacement with less power losses and lower latencies than conventional devices. IRF820 is available in dual versions, with a low side version optimized for circuit protection, PWM adjustments, and voltage level shifting. Also, the device has fast switching capabilities and low gate-charge losses.

The IRF820 has a drain-source breakdown voltage of 40V, 95A drain-source current, and an on-state resistance of 7.8mOhms. Its gate-source voltage is rated up to ±20V, it has a unique gate design that enables a low gate-charge loss, and fast switching characteristics. The maximum temperature range of this device is up to 150°C. Being more reliable and efficient than conventional devices, the IRF820 offers higher levels of efficiency and switching performance.

Like other power MOSFETs, IRF820 operates by using metal-oxide-semiconductor (MOS) technology. The device consists of three pins – source, drain, and gate. The source pin is the negative terminal, and the drain pin is the positive terminal. The gate pin is a terminal for controlling the voltage flow through the drain and source pins. When a controlling voltage is applied to the gate pin, it creates an electric field within the metal-oxide layer, resulting in changing the resistance of the drain-source path, so controlling the voltage flow through the device.

The IRF820 is widely used in many different areas and applications. It is primarily used in DC-DC converters, power supplies, motor control circuits, DC-AC converters and high-frequency switching applications. It is particularly well-suited for heavy-duty applications and/ as it has fast switching and a low on-state resistance. Additionally, the device has various features that make it ideal for use in automotive and industrial applications. These features include a low operating temperature and a low saturation voltage.

In summary, IRF820 is a widely used power MOSFET with a high input impedance and a low on-state resistance. It is suitable for many applications, primarily those involving power flow regulation, switching, and voltage level shifting. It has fast switching capabilities, a low on-state resistance, and a low operating temperature. Furthermore, the device has various features, such as a drain-source breakdown voltage, 95A drain-source current, and ±20V gate-source voltage, which make it ideal for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference