Allicdata Part #: | IRF840LCPBF-ND |
Manufacturer Part#: |
IRF840LCPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A TO-220AB |
More Detail: | N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-2... |
DataSheet: | IRF840LCPBF Datasheet/PDF |
Quantity: | 785 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IRF840LCPBF Application Field and Working PrincipleIRF840 LCPBF is a type of insulated-gate field effect transistor (IGFET), a type of power MOSFET used for applications such as high current switching, high voltage switching or voltage regulation. The IRF840 LCPBF is a single-transistor, N-channel enhancement-mode power MOSFET that operates at a higher efficiency and switching speed than most other transistors.At a high level, the IRF840 LCPBF MOSFET works similarly to a pair of back-to-back field effect transistors (FETs). In other words, it has 2 "gates" or "depletion regions" which act as on/off switches to pass or stop the flow of current between the drain and the source. In this case, the gates are insulated from one another and the drain-source voltage is sustained by an electrostatic field created between them.The IRF840 LCPBF has a wide range of applications. It is often used as an amplifier to increase the power of an electrical signal, as an electronic switch to control the current that flows through a circuit, or as a voltage regulator to keep the voltage at a steady level. It can also be used to control the power that is delivered to an electrical device, such as a light bulb, or to control the speed of a motor. It is also used in power supplies to provide power to electrical components, such as processors and memory chips.The IRF840 LCPBF can also be used for switching and timing applications. It is a "p-channel" MOSFET, which means that the direction of current flow is from the source to the drain. This makes it ideal for low voltage, high current switching applications because it has a low on-resistance, which can be used to reduce power dissipation and save energy.The IRF840 LCPBF is one of the most widely used power MOSFETs, due to its low on-resistance, small size and wide range of applications. Its low on-resistance makes it an ideal choice for high-power applications and its small size makes it suitable for portable and handheld devices. Its wide range of applications makes it ideal for a range of uses in the automotive, industrial, consumer and computer fields.The working principles of the IRF840 LCPBF are based on the principles of field effect transistors (FETs). Put simply, a FET is a semiconductor device that can control electric current by modifying a physical barrier (the "gate") between two terminals. One terminal (the source) is connected to a power supply and the other (the drain) is the output terminal. The physical barrier between the two terminals can be manipulated by varying the voltage applied to the control gate. In the case of the IRF840 LCPBF, the gates are insulated and the voltage applied to the gate is used to control the flow of current.When the voltage applied to the gate is increased, the barrier between the source and the drain grows weaker - this allows current to flow more freely and increases the current flow through the transistor. At the same time, the voltage drop across the drain-source terminal reduces, which results in lower power dissipation and improved efficiency. Similarly, when the voltage applied to the gate is decreased, the barrier between the source and the drain increases and the current flow is reduced.The IRF840 LCPBF is one of the most widely used MOSFETs, thanks to its low on-resistance, small size and wide range of applications. Its low on-resistance makes it an ideal choice for high-power applications and its small size makes it suitable for portable and handheld devices. Its wide range of applications makes it ideal for a range of uses in the automotive, industrial, consumer and computer fields.The specific data is subject to PDF, and the above content is for reference
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