IRFB16N50K

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	280W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2210pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	89nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	350 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The IRFB16N50K is a FET (Field Effect Transistor) that is part of a large family of high-performance power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In particular, this FET belongs to the Single MOSFETs class, which means it has a single channel, allowing for more reliable performance. The IRFB16N50K is usually employed in circuits for controlling the current in power converters and switching applications.</p><p>The typical on-state resistance of the IRFB16N50K is 11.2 mΩ up to a drain current of 16 A and a maximum drain-to-source voltage of 500 V. Due to its low Rds(on) and fast switching speeds, this FET makes an attractive choice for switching applications, such as inverters. The device is also ideal for the implementation of low side drivers and drivers in Class-D audio amplifiers.</p><p>The IRFB16N50K is also suited to be used with digital circuits, as its gate capacitance remains stable over a wide range of drain-to-source voltages, therefore maintaining switching speeds over a broad range. In addition to this, its maximum total gate charge is charged an 82 nC at 10 V, making it easier to turn on fast.</p><p>The way the IRFB16N50K works is fairly simple. It is designed such that when a positive voltage is applied at the gate (with respect to the source), it causes the FET to turn on and drains the current from the source. When the gate voltage is reversed, the FET will turn off. As such, the IRFB16N50K will only turn “on” once a certain threshold voltage is reached, as it is designed to have a gate-to-source breakdown voltage of at least 16 V.</p><p>When it comes to safety however, switching applications with sensitive circuits such as those connected to the human body should be used with caution. This is because MOSFETs generate harmful radio frequencies which can become hazardous to human health. For this reason, it is important to ensure the use of temperatures not exceeding 130°C to prevent the emission of radio frequencies.</p><p>In conclusion, the IRFB16N50K is a fast switching FET that makes an attractive choice for controlling current in power converters and switching applications, due to its low Rds(on) and high current rating. However, it is important to keep in mind the risk posed by radio frequencies emitted from the device, in order to protect the safety of sensitive circuits.</p>

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