IRFB4020PBF Allicdata Electronics
Allicdata Part #:

IRFB4020PBF-ND

Manufacturer Part#:

IRFB4020PBF

Price: $ 1.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 18A TO-220AB
More Detail: N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-...
DataSheet: IRFB4020PBF datasheetIRFB4020PBF Datasheet/PDF
Quantity: 12875
1 +: $ 1.38000
10 +: $ 1.33860
100 +: $ 1.31100
1000 +: $ 1.28340
10000 +: $ 1.24200
Stock 12875Can Ship Immediately
$ 1.38
Specifications
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFB4020PBF is a popular power Field Effect Transistor (FET) produced by International Rectifier, which is used in various high-power applications such as switching power supplies, audio amplifiers, motor drives, and other power electronics applications. It is a P-Channel Metal-Oxide Semiconductor FET (MOSFET) with a breakdown voltage of 40V and a continuous Drain-Source current of 20A. This makes the IRFB4020PBF an ideal choice for low-voltage, high-power applications.

The IRFB4020PBF is designed to be a low-voltage, high-current power transistor. It is capable of switching currents up to 20A and can handle up to 40V of voltage. The device features a maximum operating temperature of over 150°C, which makes it suitable for use in high temperature conditions. Additionally, the device is RoHS-compatible and is made using environmentally friendly materials.

The IRFB4020PBF is a three-terminal device that acts as a switch. The three pins are labeled as Gate (G), Drain (D) and Source (S). The Gate pin is used to control the current flow between the Drain and Source pins. A positive voltage applied to the Gate will increase the conductivity of the device, allowing current to flow between the Drain and Source pins. A negative voltage will decrease the conductivity, preventing current from flowing between the Drain and Source pins.

The IRFB4020PBF is a low on-resistance FET and is designed to offer superior performance in a wide range of high-power applications. It is capable of handling very high currents and voltages, making it suitable for use in applications such as high-power MOSFET switch mode power supply (SMPS) designs, motor controls, and other high-power applications. Additionally, the device offers excellent ESD protection and superior switching speed, making it an ideal choice for applications that require high-speed switching.

The IRFB4020PBF is an extremely popular device for low-voltage, high-power applications due to its impressive performance and features. Additionally, its low on-resistance, combined with its high power ratings, makes it a great choice for designers looking to reduce system power losses. Its RoHS-compliant construction and high temperature tolerance makes it suitable for use in harsh environment applications.

The specific data is subject to PDF, and the above content is for reference

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