![IRFB4020PBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFB4020PBF-ND |
Manufacturer Part#: |
IRFB4020PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 18A TO-220AB |
More Detail: | N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 12875 |
Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFB4020PBF is a popular power Field Effect Transistor (FET) produced by International Rectifier, which is used in various high-power applications such as switching power supplies, audio amplifiers, motor drives, and other power electronics applications. It is a P-Channel Metal-Oxide Semiconductor FET (MOSFET) with a breakdown voltage of 40V and a continuous Drain-Source current of 20A. This makes the IRFB4020PBF an ideal choice for low-voltage, high-power applications.
The IRFB4020PBF is designed to be a low-voltage, high-current power transistor. It is capable of switching currents up to 20A and can handle up to 40V of voltage. The device features a maximum operating temperature of over 150°C, which makes it suitable for use in high temperature conditions. Additionally, the device is RoHS-compatible and is made using environmentally friendly materials.
The IRFB4020PBF is a three-terminal device that acts as a switch. The three pins are labeled as Gate (G), Drain (D) and Source (S). The Gate pin is used to control the current flow between the Drain and Source pins. A positive voltage applied to the Gate will increase the conductivity of the device, allowing current to flow between the Drain and Source pins. A negative voltage will decrease the conductivity, preventing current from flowing between the Drain and Source pins.
The IRFB4020PBF is a low on-resistance FET and is designed to offer superior performance in a wide range of high-power applications. It is capable of handling very high currents and voltages, making it suitable for use in applications such as high-power MOSFET switch mode power supply (SMPS) designs, motor controls, and other high-power applications. Additionally, the device offers excellent ESD protection and superior switching speed, making it an ideal choice for applications that require high-speed switching.
The IRFB4020PBF is an extremely popular device for low-voltage, high-power applications due to its impressive performance and features. Additionally, its low on-resistance, combined with its high power ratings, makes it a great choice for designers looking to reduce system power losses. Its RoHS-compliant construction and high temperature tolerance makes it suitable for use in harsh environment applications.
The specific data is subject to PDF, and the above content is for reference
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