| Allicdata Part #: | IRFBF20STRR-ND |
| Manufacturer Part#: |
IRFBF20STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 900V 1.7A D2PAK |
| More Detail: | N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surfa... |
| DataSheet: | IRFBF20STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 54W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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.Introduction
The IRFBF20STRR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET). This is one of the most commonly used transistors because of its strong current handling capability, wide frequency range, and fast switching capability, making it suitable for numerous applications. In this article, the application field and working principle of the IRFBF20STRR will be discussed.
Application Field of IRFBF20STRR
The IRFBF20STRR is a general-purpose MOSFET used in numerous applications in electronics. It is most commonly used as a switching device in power electronics, controlling power supplies and other electrical systems with strong current and wide frequency range. It is also used in pulse width modulation circuits, motor control, voltage regulators, and driver circuits, among others. Its fast switching capability can also be used in radar and communication systems. It can act as an amplifier and is often used in low noise, low distortion audio amplifiers.
Working Principle of IRFBF20STRR
The IRFBF20STRR is a voltage-controlled MOSFET, meaning that its output current is controlled by the voltage at its gate. Constructed from a combination of semiconductor materials, it has multiple layers which include the source, drain, and gate. The source and drain are terminals that allow current to pass through, while the gate is the control terminal. When a positive voltage is applied to the gate terminal, it creates an electric field which enables the transistor to conduct current, allowing it to act as a switch. If the gate voltage is negative, the electric field is reversed, the transistor is cut off, and the current is blocked. The IRFBF20STRR is an enhancement type MOSFET, which means it is always in its “on” state, even without any gate voltage. The gate voltage simply determines how much current can be conducted.
Conclusion
The IRFBF20STRR is a general-purpose MOSFET used in various applications. Its fast switching capability and strong current handling capabilities make it ideal for use in power supplies and other electrical systems, amplifiers, and pulse modulation circuits. The working principle of the IRFBF20STRR is simple; it is controlled by the voltage applied to its gate which determines the amount of current that can be conducted.
The specific data is subject to PDF, and the above content is for reference
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IRFBF20STRR Datasheet/PDF