IRFBF20STRR Allicdata Electronics
Allicdata Part #:

IRFBF20STRR-ND

Manufacturer Part#:

IRFBF20STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.7A D2PAK
More Detail: N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surfa...
DataSheet: IRFBF20STRR datasheetIRFBF20STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

The IRFBF20STRR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET). This is one of the most commonly used transistors because of its strong current handling capability, wide frequency range, and fast switching capability, making it suitable for numerous applications. In this article, the application field and working principle of the IRFBF20STRR will be discussed.

Application Field of IRFBF20STRR

The IRFBF20STRR is a general-purpose MOSFET used in numerous applications in electronics. It is most commonly used as a switching device in power electronics, controlling power supplies and other electrical systems with strong current and wide frequency range. It is also used in pulse width modulation circuits, motor control, voltage regulators, and driver circuits, among others. Its fast switching capability can also be used in radar and communication systems. It can act as an amplifier and is often used in low noise, low distortion audio amplifiers.

Working Principle of IRFBF20STRR

The IRFBF20STRR is a voltage-controlled MOSFET, meaning that its output current is controlled by the voltage at its gate. Constructed from a combination of semiconductor materials, it has multiple layers which include the source, drain, and gate. The source and drain are terminals that allow current to pass through, while the gate is the control terminal. When a positive voltage is applied to the gate terminal, it creates an electric field which enables the transistor to conduct current, allowing it to act as a switch. If the gate voltage is negative, the electric field is reversed, the transistor is cut off, and the current is blocked. The IRFBF20STRR is an enhancement type MOSFET, which means it is always in its “on” state, even without any gate voltage. The gate voltage simply determines how much current can be conducted.

Conclusion

The IRFBF20STRR is a general-purpose MOSFET used in various applications. Its fast switching capability and strong current handling capabilities make it ideal for use in power supplies and other electrical systems, amplifiers, and pulse modulation circuits. The working principle of the IRFBF20STRR is simple; it is controlled by the voltage applied to its gate which determines the amount of current that can be conducted.

The specific data is subject to PDF, and the above content is for reference

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