IRFBC40LCSTRR Allicdata Electronics
Allicdata Part #:

IRFBC40LCSTRR-ND

Manufacturer Part#:

IRFBC40LCSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.2A D2PAK
More Detail: N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D...
DataSheet: IRFBC40LCSTRR datasheetIRFBC40LCSTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFBC40LCSTRR is a high-speed switching transistor. It is designed for use as a switch to control current or voltage variations which can range from several amperes to hundreds of volts. It can also be used to boost a weak signal in a wide range of applications. With its numerous features, it has a vast potential for use in many applications. This article will discuss the application field and working principle of the IRFBC40LCSTRR.

The IRFBC40LCSTRR is typically used in DC and AC motor drives, high-speed switching, uninterruptible power supplies, power supplies in consumer electronics and more. It is a fast switching transistors that can be used to control current and voltage variations. It also provides fast response time, low on-resistance, good static and dynamic characteristics. It is suitable for high-speed switching applications that require low on-resistance and high operating frequencies.

The working principle of the IRFBC40LCSTRR is based on the metal-oxide-semiconductor field-effect transistor (MOSFET). It is a unipolar transistor that uses a voltage level at its gate terminal to control the channel between its source and drain, which carries the majority of the current in the device. When a negative voltage is applied to its gate terminal, the transistor enters its “off” state, blocking any current that tries to flow through it. When a positive voltage is applied to the gate, the field effect that exists between the drain and source is lowered, allowing current to flow. This type of transistor is highly efficient, and its very low on-resistance feature makes it ideal for high frequency switching applications.

In terms of structure, the IRFBC40LCSTRR is composed of a channel layer sandwiched between two gate layers. The construction of this transistor helps to reduce the relative capacitance between the drain and source, which makes it ideal for high frequency switching applications. The gate layer is composed of the “gate dielectric” and the “gate conductor” and is designed to control the current flow between the drain and source. The drain and source and drain contact layers are also designed to allow the current to pass through freely and efficiently. The construction of the IRFBC40LCSTRR allows it to be highly efficient and to offer low on-resistance.

The IRFBC40LCSTRR is suitable for a wide range of applications including DC and AC motor drives, high-speed switching, uninterruptible power supplies, and power supplies in consumer electronics. With its fast switching time, low on-resistance, and good static and dynamic characteristics, it can be used to control current and voltage variations and to boost weak signals. It is an efficient and reliable transistor that is suitable for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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