IRFBC40AL Discrete Semiconductor Products |
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| Allicdata Part #: | IRFBC40AL-ND |
| Manufacturer Part#: |
IRFBC40AL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 6.2A TO-262 |
| More Detail: | N-Channel 600V 6.2A (Tc) Through Hole I2PAK |
| DataSheet: | IRFBC40AL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -- |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1036pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFBC40AL is part of a wide selection of field-effect transistors (FETs). Specifically, it falls into the category of a single MOSFET, meaning it has a single metal-oxide semiconductor field-effect transistor with one gate terminal. It is an important device for those looking to manage current flows using low-level, low-voltage signals.
Due to its small size, simple configuration, and low-power operation, the IRFBC40AL is well-suited for a wide range of applications. Perhaps its most common use is as an input and output buffer in low-level signals, particularly for audio and video applications. In these cases, the FET allows the audio and video signals to be isolated from the main application circuitry, providing excellent noise and crosstalk immunity.
The IRFBC40AL is particularly well-suited for use in low-voltage, battery-powered electronics and audio/video equipment. This is because it has extremely low gate charge, meaning the transistor will use very little current when operating in the off-state. This means that the battery life in these types of applications can be increased without sacrificing performance.
The working principle of the IRFBC40AL is quite simple. It consists of two p-type and two n-type silicon semiconductor layers. These layers are separated by a thin insulating layer, known as a gate oxide. By applying a voltage to the gate terminal, a field is created across the gate oxide, causing current to pass between the two semiconductor layers. This varying current causes the transistor to switch between two states: on, or closed, and off, or open.
The IRFBC40AL is designed to operate with both AC and DC signals, making it a versatile option for a wide range of applications. It can also be used as an amplifier due to its low input capacitance. The transistor also has excellent output current handling capabilities, making it suitable for both linear and switching applications.
The small size of the FET makes it well-suited for use in miniature electronics, such as mobile phones, PDAs, and other small gadgets. It is also well-suited for use in low-power, low-voltage applications, such as in solar-powered electronics. Additionally, its low gate charge makes it energy-efficient, making it the perfect choice for handheld and battery-powered devices.
In short, the IRFBC40AL is a versatile single MOSFET that can be used in a myriad of applications. Its small size, low gate charge, and excellent output current handling capabilities make it well-suited for low-voltage, low-power applications. Additionally, its compatibility with AC and DC signals make it well-suited for a wide range of audio and video applications. This makes it an excellent choice for those looking for an efficient and reliable FET.
The specific data is subject to PDF, and the above content is for reference
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IRFBC40AL Datasheet/PDF