IRFB9N60A Allicdata Electronics
Allicdata Part #:

IRFB9N60A-ND

Manufacturer Part#:

IRFB9N60A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 9.2A TO-220AB
More Detail: N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO...
DataSheet: IRFB9N60A datasheetIRFB9N60A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFB9N60A application field and working principle

The IRFB9N60A is a type of FET (field-effect transistor) that operates as a switch or amplifier. This is a single MOSFET, meaning it has a single gate terminal and two source/drain terminals. It is widely used in electronics because it is inexpensive and is able to handle larger currents and voltages than conventional bipolar transistors.

The IRFB9N60A is a n-channel type MOSFET. N-channel MOSFETs have a source and drain that are both made of metal electrodes, usually aluminum. The metal of the source is positively charged and the metal of the drain is negatively charged. An electric field is created between them, and this is the field-effect that gives MOSFETs their name. The field-effect is created by the application of a voltage to the gate terminal, which modifies the electric field between the source and the drain.

The IRFB9N60A is normally used as a power switch, offering very low "on" resistance and very high current capability. The gate voltage required to turn on the transistor is relatively small, usually a few volts. It is typically used to switch DC power circuits, such as those in motor control, robotics, audio amplifiers, and other power supplies. The IRFB9N60A\'s low on-resistance and high current capability make it ideal for these applications.

The IRFB9N60A works as a switch by controlling the flow of electric current between its source and drain, depending on the voltage applied to its gate terminal. When the gate voltage is low, the electric field between the source and drain is small and current cannot flow; when the gate voltage is increased, the electric field grows and electric current can flow. The IRFB9N60A can also be used as an amplifier. By controlling the gate voltage, the current between the source and drain can be manipulated to achieve different amplification levels.

The IRFB9N60A is a relatively inexpensive and reliable choice for power switch and amplifier applications. Its low "on" resistance makes it ideal for power control, and its wide operating voltage range (20-100V) make it suitable for many different applications. Additionally, its high current capability and good thermal characteristics make it a popular choice for many types of amplifier and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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