IRFB18N50KPBF

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The IRFB18N50KPBF is a power MOSFET designed for high current applications, such as motor drive, power conversion, and power supply applications. It is part of International Rectifier\'s HEXFET® range, a series of power MOSFETs with a range of low voltage and high current applications.

The IRFB18N50KPBF utilises a double-diffused MOSFET process, combining vertical and lateral device structures. This structure has the advantage of strong and rapid switching characteristics, low maximum RDSon, low gate charge and low gate-induced drain leakage. This makes the MOSFET ideal for both linear and switching applications, offering high efficiency and high power density across the voltage and current range.

The IRFB18N50KPBF is a N-channel enhancement mode MOSFET with a drain-source breakdown voltage of 500V, drain current at 25°C of 18A, and maximum RDSon at 25°C of 7.5mΩ, making it suitable for applications such as motor drive, power conversion, and power supply applications.

The IRFB18N50KPBF\'s working principle is based on the movement of holes, electrons and interfaces in the device structure. When a gate voltage is applied to the device, an electric field is generated which attracts holes or electrons to the interface. As the electric field increases, a potential barrier is created that restricts the mobility of the charge carriers, and a current flows when threshold voltage (VGS(th)) is reached. With the threshold voltage reached, there is a significant increase in the current flowing through the device, with a resulting drain voltage (VDS) across the channel.

The IRFB18N50KPBF offers excellent conduction and switching performance and is ideal for applications that require high current load and high frequency switching, such as motor drive, power conversion, and power supply applications. The MOSFET is designed to provide high efficiency, high power density and fast switching speed, making it suitable for a variety of power applications.

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