| Allicdata Part #: | IRFBC20STRR-ND |
| Manufacturer Part#: |
IRFBC20STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 2.2A D2PAK |
| More Detail: | N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
| DataSheet: | IRFBC20STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRFBC20STRR is a depletion-mode insulated-gate field-effect transistor, also known as an IGFET, which is a type of metal oxide semiconductor field-effect transistor (MOSFET). It is specifically designed for high temperature and low on-resistance applications, making it ideal for use in power electronics. It has a relatively small footprint and is capable of handling high power levels. In addition, it features a high-temperature rating.
The IRFBC20STRR operates in a bilateral fashion, meaning that it can be used as either an amplifier or a switch. It can be used to control the flow of current in electronic circuits. When used as an amplifier, the IRFBC20STRR can be used to amplify signals, convert analog signals to digital signals, and control voltage. When used as a switch, it controls the current flow in the circuit. It is commonly used in power control applications.
The IRFBC20STRR is comprised of an insulated gate, source, and drain. The insulated gate is connected to a voltage source and acts as the control device for the transistor. When the gate voltage is low, current does not flow between the source and drain, and the transistor is considered to be off. When the gate voltage is high, current does flow between the source and drain, and the transistor is considered to be on. In this state, the IRFBC20STRR can act either as an amplifier or a switch.
The IRFBC20STRR is designed to handle high levels of power, up to 20A of peak current. It also has a low-on-resistance, allowing it to minimize power loss and improve efficiency. In addition, it can handle temperatures up to 175°C, making it suitable for high temperature applications. It also features a low gate-drain capacitance, reducing the effects of noise, and it has low gate-source leakage current.
The IRFBC20STRR is a versatile power device, and can be used in a wide range of applications. It is commonly used in motor control applications, power converters, and DC-DC power supplies. It can also be used in audio amplifiers, instrumentation, and communications equipment. In addition, it is ideal for automotive and industrial applications.
The IRFBC20STRR is a robust and reliable power device, and is capable of handling high power levels and temperatures without fail. Its high current ratings and low on-resistance make it ideal for demanding high-power applications. Its low gate-drain capacitance helps reduce the effects of noise, and its high temperature rating makes it suitable for high temperature applications. In addition, it is easy to use and can be quickly and easily implemented into electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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IRFBC20STRR Datasheet/PDF