IRFB33N15D Allicdata Electronics
Allicdata Part #:

IRFB33N15D-ND

Manufacturer Part#:

IRFB33N15D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 33A TO-220AB
More Detail: N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Throu...
DataSheet: IRFB33N15D datasheetIRFB33N15D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFB33N15D is a type of field-effect transistor (FET) and a type of metal oxide semiconductor FET (MOSFET). This particular MOSFET is a type of single transistor, which is also known as a single-channel device. This particular MOSFET is made of vertical power MOSFETs, and being a single device, it can be used in systems and applications requiring a single device.

It is mainly used in DC-DC converters and applications that need to control current levels. This MOSFET comes with a variety of features, some of them being an ultra-low gate charge for fast switching, high current density for greater efficiency, and low threshold voltage for increased driving efficiency.

This FET is widely used in motor drives, switching converters, LED drivers, audio amplifiers, and other power related applications. It comes with a variety of features, making it an attractive choice for many industries and applications. These features include an ultra-low on-resistance, high current capacity, low gate threshold voltage, and a wide operating temperature range.

The IRFB33N15D is designed to provide excellent power efficiency, low power dissipation, and superior thermal performance. It has a maximum drain-source voltage of 600V and a peak current of 38A. It also has a maximum drain gate charge of 0.5mA, which is a very low figure compared to other similar MOSFETs. Another great feature of this MOSFET is its high breakdown voltage, which is up to -20V.

The working principle of the IRFB33N15D transistors is same as that of any other MOSFET. When a gate voltage is applied, it passes a current through the channel between the source and the drain. The amount of current that passes through the channel is proportional to the gate voltage that is applied. The voltage applied to the gate is used to control the current that passes through the MOSFET.

The IRFB33N15D is a great choice for applications that require a single device and for applications needing excellent power efficiency and high current densities. It comes with a variety of features and its wide operating temperature range makes it a great choice for many types of applications. So if you are looking for a high-performing MOSFET, the IRFB33N15D can be an excellent option.

The specific data is subject to PDF, and the above content is for reference

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