| Allicdata Part #: | IRFB4115GPBF-ND |
| Manufacturer Part#: |
IRFB4115GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 104A TO220AB |
| More Detail: | N-Channel 150V 104A (Tc) 380W (Tc) Through Hole TO... |
| DataSheet: | IRFB4115GPBF Datasheet/PDF |
| Quantity: | 1164 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 380W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 62A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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IRFB4115GPBF is an advanced N-channel MOSFET manufactured by International Rectifier. It is like a switch that can change an electronic signal, allowing faster switching and higher switching frequencies.
The IRFB4115GPBF is a low-cost, low-voltage, enhancement-mode MOSFET. It features a drain-source breakdown voltage of 25V, a maximum drain current of 15A and a maximum continuous drain current of 8A.
The device is designed for applications such as high-speed switching, switching polarity and low-loss switching, such as in audio amplifiers, DC to DC converters, and power supplies. Moreover, it has been designed to withstand higher reverse leakage and is suitable for use in general-purpose, mostly digital circuits where low power dissipation, low on-state resistance and high frequency operation are important.
The prescribed application field and working principle of this device is as follows. As a MOSFET, it is used in different circuits in order to switch electrical signals on/off or control a current by changing its resistance. When the gate of this MOSFET is charged with positive voltage (equaling and exceeding the threshold voltage of 4V), electrons are drawn to the channel between the source and the drain, thus reducing the channel\'s resistance. This will cause the drain-source voltage to drop, and current to flow between the drain and the source.
When the gate voltage is decreased, the resistance of the channel between source and drain will increase again, causing the current to be cut off. This device has a very low on-state resistance (<0.235Ω at 4.5V) which means that it can easily switch high currents with a minimal voltage drop. This makes it highly suitable for switching low-to-medium power loads with a low loss.
This device is particularly useful for high-speed switching, since its switching speed is very high. Since the gate drive requirements of this device are small, it can switch fast and efficiently, allowing for higher frequencies and better efficiency in digital circuits. The device\'s low input capacitance and low gate charge further enhances this operation.
The IRFB4115GPBF is also known for its robust construction, reliable performance and durability. It is a common choice for applications such as audio amplifiers, DC to DC converters and power supplies, thanks to its low on-state resistance and low reverse leakage.
Overall, the IRFB4115GPBF is a highly effective device for a variety of high-frequency, low-power applications. Its features and characteristics make it a preferred choice for its application field, as it delivers outstanding performance in terms of switching speed, robust construction, low on-state resistance and low-loss operation.
The specific data is subject to PDF, and the above content is for reference
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IRFB4115GPBF Datasheet/PDF