
Allicdata Part #: | IRFBF30STRR-ND |
Manufacturer Part#: |
IRFBF30STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 900V 3.6A D2PAK |
More Detail: | N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount D... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFBF30STRR is a device based on Field Effect Transistor (FET) technology. It is a single MOSFET that is used in many applications. In this article, we will discuss the application field and working principle of the IRFBF30STRR.
Application Field
The IRFBF30STRR device is most often used in audio amplifiers, power supplies, and motor control applications. The use of this specific device simplifes circuits in these applications and makes them more efficient. It can also be used in different types of high-voltage switch-mode power supplies, especially in SMPS applications. Additionally, it can be used in high-current-carrying motors or circuitry, adding to its already broad range of applications.
Working principle
The IRFBF30STRR works on the principle of the field effect transistor. A field effect transistor is a semiconductor device with three terminals; the source, the drain, and the gate. It has a control electrode, the gate, and two other terminals, the source and the drain. A voltage applied to the gate controls the flow of current between the source and the drain. This device works by having two distinct regions: the P-type and the N-type regions separated by a channel of a different type. When a voltage is applied to the gate, it acts as an electric field, allowing the current to flow. This device then acts as a variable resistor, with the resistance depending on the voltage applied to the gate.
The IRFBF30STRR has numerous advantages and uses due to its efficient field effect transistor technology. The device is most often used in amplifier and power supply applications, but can also be used in other applications such as high-voltage switch-mode power supplies and high-current-carrying motors. Its versatile nature, combined with its efficient field effect transistor technology, make it the perfect option for many types of applications.
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