IRFBF30STRR Allicdata Electronics
Allicdata Part #:

IRFBF30STRR-ND

Manufacturer Part#:

IRFBF30STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 3.6A D2PAK
More Detail: N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount D...
DataSheet: IRFBF30STRR datasheetIRFBF30STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFBF30STRR is a device based on Field Effect Transistor (FET) technology. It is a single MOSFET that is used in many applications. In this article, we will discuss the application field and working principle of the IRFBF30STRR.

Application Field

The IRFBF30STRR device is most often used in audio amplifiers, power supplies, and motor control applications. The use of this specific device simplifes circuits in these applications and makes them more efficient. It can also be used in different types of high-voltage switch-mode power supplies, especially in SMPS applications. Additionally, it can be used in high-current-carrying motors or circuitry, adding to its already broad range of applications.

Working principle

The IRFBF30STRR works on the principle of the field effect transistor. A field effect transistor is a semiconductor device with three terminals; the source, the drain, and the gate. It has a control electrode, the gate, and two other terminals, the source and the drain. A voltage applied to the gate controls the flow of current between the source and the drain. This device works by having two distinct regions: the P-type and the N-type regions separated by a channel of a different type. When a voltage is applied to the gate, it acts as an electric field, allowing the current to flow. This device then acts as a variable resistor, with the resistance depending on the voltage applied to the gate.

The IRFBF30STRR has numerous advantages and uses due to its efficient field effect transistor technology. The device is most often used in amplifier and power supply applications, but can also be used in other applications such as high-voltage switch-mode power supplies and high-current-carrying motors. Its versatile nature, combined with its efficient field effect transistor technology, make it the perfect option for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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