| Allicdata Part #: | IRFBF20PBF-ND |
| Manufacturer Part#: |
IRFBF20PBF |
| Price: | $ 1.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 900V 1.7A TO-220ABN-Channel 900V 1.7A ... |
| More Detail: | N/A |
| DataSheet: | IRFBF20PBF Datasheet/PDF |
| Quantity: | 562 |
| 1 +: | $ 1.37000 |
| 10 +: | $ 1.32890 |
| 100 +: | $ 1.30150 |
| 1000 +: | $ 1.27410 |
| 10000 +: | $ 1.23300 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 54W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Base Part Number: | -- |
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The IRFBF20PBF is a high performance, enhancement-mode vertical channel field-effect transistor (FET) manufactured by IR. The device uses a single vertical MOSFET architecture and is designed for use in a variety of applications, including motor control, power management, and power converter regulation.
An important characteristic of a MOSFET is its gate threshold voltage, or V̂T. This parameter governs how much voltage is required to turn the device "on", allowing current to flow through the transistor. The IRFBF20PBF has a gate threshold voltage of -2.1V, which is typical of many MOSFETs in this category. This means that the device can be switched on and off with a relatively low voltage and current, making it suitable for low-power applications.
The device is also quite efficient. It has an on-resistance (R̂DS(on)) of 0.54Ω, which means that it can produce a large amount of power with only a small amount of current. This makes the device well-suited to applications such as motor control, where efficiency is important. In addition, the device has a maximum voltage rating of 20V, making it suitable for a wide range of applications.
An important feature of the IRFBF20PBF is its ruggedness. It has an Avalanche Energy rating of 4.5mJ - making it more resilient to over-voltage conditions than many other MOSFETs. This makes it a great choice for applications such as SMPS circuits or motor control. The device is also protected against reverse-voltage and electro-static discharge, adding to its reliability.
The IRFBF20PBF is a versatile MOSFET with a wide range of applications. It is suitable for low-power applications where efficiency is important, and can also handle tough conditions due to its strong resilience. The device's low threshold voltage and high Avalanche Energy rating makes it a good choice for applications such as motor control, power management, and power converter regulation.
The specific data is subject to PDF, and the above content is for reference
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IRFBF20PBF Datasheet/PDF