Allicdata Part #: | IRFB3607PBF-ND |
Manufacturer Part#: |
IRFB3607PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 80A TO-220AB |
More Detail: | N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-2... |
DataSheet: | IRFB3607PBF Datasheet/PDF |
Quantity: | 802 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFB3607PBF Application Field and Working Principle
International Rectifier\'s IRFB3607PBF is a N-channel MOSFET designed for use as a power field-effect transistor. It is capable of switching up to 30A of continuous DC current and has an RDS (ON) of only 0.041 ohms. This makes it suitable for use in a wide range of applications, from high-efficiency, high-power SMPS designs to a variety of motor control applications.
The IRFB3607PBF is a single N-channel MOSFET which utilizes advanced rectangle-gate technology. The device is an enhancement mode MOSFET, meaning that it is capable of switching quickly between an "ON" state and an "OFF" state by applying a voltage to the control gate. This process works by introducing an electric field which modulates the drain current.
Due to its high current capability, the device is ideal for a variety of fast switching applications such as DC-DC converters and motor control systems. It is also air cooled, making it suitable for use in a wide range of ambient temperatures. The device can also be used as a buffer, as the fast switching times make it suitable for use in high-frequency applications.
In addition, the device features relatively low input capacitance and a low reverse transfer capacitance. This allows the device to switch quickly, providing a fast propagation delay. This makes it suitable for a variety of timing and control applications, including low jitter oscillators and pulse generators.
The IRFB3607PBF also features a linear operating region, making it well-suited for applications where linear control of drain current is required, such as in motor control systems. The device\'s low internal capacitances also make it suitable for a variety of RF applications, such as in switches, oscillators, and amplifiers.
Overall, the IRFB3607PBF is a very versatile MOSFET which is suitable for a wide variety of power switching and control applications, from high-efficiency DC-DC converters to motor control systems. The device is also well-suited for use in a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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