IRFB7430GPBF

Vgs(th) (Max) @ Id:	3.9V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14240pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	460nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.3 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFB7430GPBF Application Field and Working Principle

The IRFB7430GPBF is a N-Channel MOSFET transistor specifically designed for use in high power audio amplifiers. It is manufactured by Infineon and is the first OFET MOSFET available to the public. This MOSFET is designed to withstand very high frequencies and to provide a very high current carrying capability. The IRFB7430GPBF is also designed to operate at a very low temperature with very low thermal resistance.The IRFB7430GPBF is a N-Channel MOSFET transistor specifically designed for use in high power audio amplifiers. It is typically used in Bridge, Class A to Class AB audio amplifiers. The IRFB7430GPBF is a very reliable MOSFET and is used in many high-end audio amplifiers. It has a maximum drain-source voltage rating of 500 volts and can provide a maximum current carrying capability of 800 amps. In addition, it has a very low on-resistance of 93 milliohms and a very fast switching speed of 2 nanoseconds.The IRFB7430GPBF is a highly efficient MOSFET transistor. It can provide a very high current carrying capability with minimal losses. The low on-resistance of this transistor also allows for a high degree of energy efficiency. In addition, the fast switching speed of this MOSFET allows for higher switching frequency and lower heat generation.The IRFB7430GPBF has a very low threshold voltage and can be driven using standard logic signals. This MOSFET can be driven by either a positive or a negative gate voltage and it has a very high gate-source voltage rating of 11 volts. In addition, it has a very low junction-to-case thermal resistance of 0.5 degrees C/Watt.The IRFB7430GPBF works in the same way as other MOSFET transistors. When a voltage is applied to the gate of the transistor, it creates a conductive channel between its source and drain terminals. This allows current to flow through the transistor when the gate voltage is high enough to turn it on. The current flow through this MOSFET transistor can be controlled by increasing or decreasing the gate voltage, allowing the designer to control the output of the transistor.In conclusion, the IRFB7430GPBF is a highly efficient N-Channel MOSFET transistor specifically designed for use in high power audio amplifiers. It has a very low on-resistance, a very high maximum current carrying capability and a very fast switching speed. It can be driven using standard logic signals and it has a very low junction-to-case thermal resistance. This MOSFET is an excellent choice for audio applications that require high power efficiency and very low noise.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description