Allicdata Part #: | IRFB7434GPBF-ND |
Manufacturer Part#: |
IRFB7434GPBF |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 40V 195A TO220AB |
More Detail: | N-Channel 40V 195A (Tc) Through Hole TO-220-3 |
DataSheet: | IRFB7434GPBF Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.79714 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 324nC @ 10V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFB7434GPBF is an advanced power MOSFET designed for switching converter applications. It is a 100V N-Channel MOSFET with low on-resistance, low gate charge and low gate-source threshold voltage. It has an insulated gate system which can allow high level current density and low internal power dissipation.
The IRFB7434GPBF is typically used in DC-DC converters, DC-AC inverters, motor control, and battery management applications. It is also suitable for fast switching, low noise, and power converters switching power supplies. The N-channel also provides a high efficiency and integrated protection features.
The IRFB7434GPBF features a very low RDS(ON) of 4.5mΩ and is capable of one-chip / drive solution for switching power converters. It\'s low gate charge (Qg) enables fast switching speeds. It also has fast turn-on and turn-off times allowing for fast frequency response.
The IRFB7434GPBF working principle is based on a direct electron transfer from the gate channel to the drain channel, where charges are transferred between the two channels. This direct transfer of electrons between the gate and drain channel is referred to as MOSFET action. In other words, when a signal is applied to the gate, it creates a voltage across the drain and source channels, which causes current to flow through the MOSFET. This electron transfer causes the MOSFET to act as a switch, allowing or preventing the current from flowing through the MOSFET depending on the signal applied to the gate.
The IRFB7434GPBF offers a wide input voltage range from 14V to 100V so it can be used in a variety of applications. It also has a high short circuit current rating of 4A and low reverse transfer capacitance for fast switching and high frequency operation. It also features inherent ESD protection, which helps protect the device from ESD events.
The IRFB7434GPBF is available in a surface mount packaging, and offers excellent thermal management through the use of heat-sinks and thermal compounds. This helps to ensure that the device operates at a safe temperature, even during periods of high current. The IRFB7434GPBF is a reliable MOSFET that can provide efficient and cost-effective solutions for a variety of applications such as DC-DC converters, switching power supplies and other power applications.
The specific data is subject to PDF, and the above content is for reference
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