IRFB7545PBF

Vgs(th) (Max) @ Id:	3.7V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4010pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:	5.9 mOhm @ 57A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	95A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRFB7545PBF is a depletion-mode type N-channel power field effect transistor (FET). Its main application field lies in those situations that require high current and low voltage switches or loads. This FET works by allowing the source-drain current to flow when certain conditions are met, either through its gate or through body-diode action.When the gate voltage is equal to, or lower than, the source voltage, the transistor is in the "off" state, i.e. no current flows from the drain to the source. This is known as the pinch-off state. When the gate voltage is raised, the source-drain current increases and so does the source-gate current with each gate voltage increment, eventually reaching a linear region in which the gate-source and drain-source currents are nearly equal. This region is known as the linear region and is where the FET operates properly.When the FET is in the linear region, the drain-source resistance behaves like a resistor, which is a function of the gate-source voltage. This resistance is determined by the channel length, the channel width and the gate voltage.When the gate-source voltage is positive, the gate attracts minority carriers (holes) which form a conductive layer, known as the channel, at the interface between the gate and the source. This channel becomes the conductive layer for current to flow between the source and the drain. The gate-source voltage also determines how long the channel is, the width of the channel and how much current can flow through it.To understand how the IRFB7545PBF works, it is important to know the construction and imaging of its parts. The FET has three primary parts: the source, the drain, and the gate. The source and the drain are metal layers located at the two ends of the FET. The metal layers are insulated from each other by an oxide layer. The gate is an insulated metal layer located between the source and the drain. It is charged with a specific amount of voltage, depending on the desired operation.When the gate-source voltage is positive, the channel is created and current can flow between the source and the drain. On the other hand, the channel is closed and no current can flow through when the gate-source voltage is negative.The junction between the source and the drain, known as the source-drain junction, also plays a role in how the IRFB7545PBF works. This junction has two main characteristics: the turn-on voltage and the turn-off voltage. The turn-on voltage is the minimum gate-source voltage needed to create the channel and allow current to flow between the source and the drain. The turn-off voltage is the gate-source voltage needed to close the channel and cease current flow.The current flow through the IRFB7545PBF is controlled by the gate-source voltage applied to the chip. A small increment of gate-source voltage will make a large difference in the drain current, enabling this FET to behave as a high-gain adjustable switch or amplifier. The drain voltage, on the other hand, is a much weaker function of the gate-source voltage.The IRFB7545PBF is a versatile and easy-to-use depletion-mode FET that is suitable for various applications, including low-voltage, high-current switches or loads, high-gain amplifiers, and other low-frequency applications. Its combination of voltage-controlled operation, high current capacity, and low-level on-resistance makes it an ideal choice for such applications.

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