IRFB9N65A

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IRFB9N65A is a single, N-Channel power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for various applications.  MOSFETs are high-efficiency, low-power electrical switches that can handle significant current and voltage levels.  IRFB9N65A is specifically designed to provide higher redundancy and performance in a wide range of applications.

The IRFB9N65A is a general-purpose MOSFET integrated circuit (IC) that can be used for many applications, including power supply circuits and heavy current control, such as for switching electrical loads. It can also be used in the design of power amplifiers, audio amplifiers, and DC-DC converters. In addition, the device is suitable for voltage-controlled switching and dimming applications, and is suitable for use in motor control, in general, industrial and commercial applications. The device is also suitable for automotive applications.

IRFB9N65A has a maximum drain source voltage rating of 650V, a maximum drain-source on-resistance of 9.5 ohms, channel-to-source breakdown voltage of 800V, and a drain-source Breakdown Voltage of 5V. The maximum DC current draw of the device is 30A, with a maximum power dissipation of 107W. It has a maximum ratting temperature (Tc) of 175°C and an on-state resistance at 25°C of 0.006 ohms.

IRFB9N65A has a minimum range of gate-source voltage of -4 V to 20V, with an operating range of -4V to 20V. The device also has a threshold voltage (Vgs) of 4.5V and a maximum Gate Current (IG) of 25mA. It has a maximum Gate–Source Voltage adjustable range of ± 20V, with a Gate Charge (Qgs) of 11 nC. The device has a maximum of 5nC gate-source Capacity.

The working principle behind IRFB9N65A is simple. It is an N-Channel FET (Field-Effect Transistor) made up of an n-type semiconductor channel between source and drain electrodes. A controlling voltage is applied to the gate which controls the current flowing through the channel. When the control voltage is high, the channel is “on” and the current is allowed to flow; when the control voltage is low, the channel is “off” and the current is prevented from flowing.

The device has been extensively tested and is available in different package options (TO-220AB and TO-262AB). Overall, the IRFB9N65A is an ideal choice for power supply, high power switch and voltage control applications. It has good switching performance, high stability and reliability due to its packed construction and the advanced process technology used in its fabrication.

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