IRFBC20L Allicdata Electronics
Allicdata Part #:

IRFBC20L-ND

Manufacturer Part#:

IRFBC20L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 2.2A TO-262
More Detail: N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Throu...
DataSheet: IRFBC20L datasheetIRFBC20L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFBC20L is an N-channel MOSFET from International Rectifier, designed for a wide range of applications. It can also be used in Switchmode and DC–DC converters as well as in analog electronic applications such as electronically controlled audio amplifiers, D/A and A/D converters, and power supply controllers. The IRFBC20L is an excellent choice for a wide range of switching and power regulation applications in the automotive industry.

The IRFBC20L comes with a trench gate structure and top-source slot insulation to suppress Electro-Magnetic Interference (EMI). It is available in standard and symmetrical packages, with lead-free and RoHS compliant options. The IRFBC20L is also able to operate at temperatures between -55°C and 125°C.

The IRFBC20L has an on-resistance of 20mΩ with an IGSS of 250V, making it an excellent choice for applications operating at frequencies up to 500kHz. The device also has a low gate charge (Qg), which is at 7nC and enables the device to minimize switching losses. With its low input capacitance (Ciss), the device is able to minimize unwanted transient noises. It also has a fast switching speed, making it ideal for power control applications. Additionally, the IRFBC20L has a low thermal resistance (RθJA) of 136°C/W, which is beneficial to applications with high power ratings.

The IRFBC20L device works on the principle of depletion-mode power MOSFET, which works to separate the source and drain by means of an electric field. In this device, the gate of the device is connected to an external source, allowing the external source to apply an electric field between source and drain. When this voltage is applied, it causes the electrons in the channel region to be deformed and therefore, it allows current flow between the source and drain. The amount of current that flows is dependent upon the applied voltage, allowing the device to operate as a variable resistor.

The IRFBC20L is also able to perform high-level on/off control applications, making it ideal for power control applications in the automotive industry. The device can also be controlled directly from an automotive engine ECU, further enhancing its power regulation capability. With its low input and output capacitance, the device is also able to reduce unwanted high-frequency noise and EMI.

In conclusion, the IRFBC20L is an excellent choice for applications that require efficient power regulation. It offers a low on-resistance, low gate charge and low thermal resistance, making it highly efficient. Additionally, its fast switching speed and low input and output capacitance make it suitable for power control applications. This makes the IRFBC20L an ideal choice for automotive industry applications.

The specific data is subject to PDF, and the above content is for reference

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